Interaction of Extreme Ultraviolet Laser Radiation with Solid Surface: Ablation, Desorption, Nanostructuring

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00445337" target="_blank" >RIV/68378271:_____/15:00445337 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389021:_____/15:00445337

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2071273" target="_blank" >http://dx.doi.org/10.1117/12.2071273</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2071273" target="_blank" >10.1117/12.2071273</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Interaction of Extreme Ultraviolet Laser Radiation with Solid Surface: Ablation, Desorption, Nanostructuring

Popis výsledku v původním jazyce

It was confirmed that nanostructuring can be realised only in the desorption area.In this area the efficiency of particle-removal from a thin surface layer (of the thickness of laser penetration depth) is very small(<10%) for short (femtosecond) laser pulses and for long (nanosecond) pulses and difficult removable material (like GaAs, Si, ).In this case the profile of pattern imprinted by one shot is shallow (units of nanometers only. However,for long (nanosecond) pulses and easily removable material (like PMMA)this changes from 0% at the beam periphery up to 90% at the ablation contour and, therefore,the profile of imprinted pattern can be relatively deep(up to 200-300 nm by one shot).A suggested interpretation explains this fact in terms of gradual release of target material during laser pulse, which is accompanied by gradually increased laser penetration depth.However, simultaneously laser attenuation in ablated plum should be considered.The detail dynamics of this process is

Název v anglickém jazyce

Interaction of Extreme Ultraviolet Laser Radiation with Solid Surface: Ablation, Desorption, Nanostructuring

Popis výsledku anglicky

It was confirmed that nanostructuring can be realised only in the desorption area.In this area the efficiency of particle-removal from a thin surface layer (of the thickness of laser penetration depth) is very small(<10%) for short (femtosecond) laser pulses and for long (nanosecond) pulses and difficult removable material (like GaAs, Si, ).In this case the profile of pattern imprinted by one shot is shallow (units of nanometers only. However,for long (nanosecond) pulses and easily removable material (like PMMA)this changes from 0% at the beam periphery up to 90% at the ablation contour and, therefore,the profile of imprinted pattern can be relatively deep(up to 200-300 nm by one shot).A suggested interpretation explains this fact in terms of gradual release of target material during laser pulse, which is accompanied by gradually increased laser penetration depth.However, simultaneously laser attenuation in ablated plum should be considered.The detail dynamics of this process is

Druh

D - Stať ve sborníku

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

<a href="/cs/project/GA14-29772S" target="_blank" >GA14-29772S: Nanostrukturování povrchů extrémním ultrafialovým a rentgenovým laserovým zářením</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceeding of SPIE Vol. 9255: 20th International Symposium on High Power Systems and Applications 2014, HPLS and A 2014

ISBN

978-1-62841-322-9

ISSN

0277-786X

e-ISSN

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Počet stran výsledku

9

Strana od-do

—

Název nakladatele

SPIE-INT SOC OPTICAL ENGINEERING

Místo vydání

Bellingham

Místo konání akce

Chengdu

Datum konání akce

25. 8. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000350338500136