Investigation of residual stress in structured diamond films grown on silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00449460" target="_blank" >RIV/68378271:_____/15:00449460 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2015.07.022" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2015.07.022</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2015.07.022" target="_blank" >10.1016/j.tsf.2015.07.022</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of residual stress in structured diamond films grown on silicon

Popis výsledku v původním jazyce

Thin diamond strips on Si with the thickness of approx. 0.5 and 1 ?m and two different widths (100 and 200 ?m) were fabricated in two different ways: i) selective ion etching of the continuous diamond films and ii) selective area diamond growth. The stress induced in the films was measured by Raman spectroscopy. The measured values were in the range from -0.7 to -0.1 GPa. It was found that the stress was compressive and independent of the film thickness. In the films deposited at 950 K, more compressivestress than at 1100 K was measured. The thermal part of the stress as a consequence of heterostructure cooling from high deposition temperature down to room temperature was calculated by Finite Element Method (FEM) simulations and compared with the measurement.

Název v anglickém jazyce

Investigation of residual stress in structured diamond films grown on silicon

Popis výsledku anglicky

Thin diamond strips on Si with the thickness of approx. 0.5 and 1 ?m and two different widths (100 and 200 ?m) were fabricated in two different ways: i) selective ion etching of the continuous diamond films and ii) selective area diamond growth. The stress induced in the films was measured by Raman spectroscopy. The measured values were in the range from -0.7 to -0.1 GPa. It was found that the stress was compressive and independent of the film thickness. In the films deposited at 950 K, more compressivestress than at 1100 K was measured. The thermal part of the stress as a consequence of heterostructure cooling from high deposition temperature down to room temperature was calculated by Finite Element Method (FEM) simulations and compared with the measurement.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GP14-16549P" target="_blank" >GP14-16549P: Ladění elektrických vlastností hybridních struktur diamantu a galium nitridu řízenou optimalizací vnitřních pnutí</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

589

Číslo periodika v rámci svazku

Aug

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

857-863

Kód UT WoS článku

000360320000135

EID výsledku v databázi Scopus

2-s2.0-84940047315