Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

Kód výsledku v IS VaVaI

RIV/68378271:_____/16:00464052 - isvavai.cz

Výsledek na webu

http://dx.doi.org/10.1016/j.matdes.2016.06.006

DOI - Digital Object Identifier

10.1016/j.matdes.2016.06.006

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

Popis výsledku v původním jazyce

In this study, we present a methodology for evaluation of thermally induced stress in diamond microstructures. The diamond strips (2 mm in width and 0.78 or 2.8 μm in thickness) were selectively grown on AlGaN/GaN heterostructures. The stress was evaluated from the Raman shift of the diamond peak position within the temperature range from 50 to 400°C. The shift was measured at two positions, i.e. at center and edge of the strip. We observed that for temperature increase from 50 to 400°C the difference between stresses evaluated at the center and edge of diamond strip (stress) decreases from 0.27 to 0.18 GPa and from 0.32 to 0.1 GPa for the thinner and thicker diamond films, respectively. Experimental data were compared with FEM simulations. The simulations fitted well to experimental data and confirmed that the stress difference between the center and edge of diamond strip was caused by thermal stress component.n

Název v anglickém jazyce

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

Popis výsledku anglicky

In this study, we present a methodology for evaluation of thermally induced stress in diamond microstructures. The diamond strips (2 mm in width and 0.78 or 2.8 μm in thickness) were selectively grown on AlGaN/GaN heterostructures. The stress was evaluated from the Raman shift of the diamond peak position within the temperature range from 50 to 400°C. The shift was measured at two positions, i.e. at center and edge of the strip. We observed that for temperature increase from 50 to 400°C the difference between stresses evaluated at the center and edge of diamond strip (stress) decreases from 0.27 to 0.18 GPa and from 0.32 to 0.1 GPa for the thinner and thicker diamond films, respectively. Experimental data were compared with FEM simulations. The simulations fitted well to experimental data and confirmed that the stress difference between the center and edge of diamond strip was caused by thermal stress component.n

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

GP14-16549P: Ladění elektrických vlastností hybridních struktur diamantu a galium nitridu řízenou optimalizací vnitřních pnutí

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials and Design

ISSN

0264-1275

e-ISSN

—

Svazek periodika

106

Číslo periodika v rámci svazku

Sep

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

305-312

Kód UT WoS článku

000381528900035

EID výsledku v databázi Scopus

2-s2.0-84989924930