Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00546598" target="_blank" >RIV/68378271:_____/21:00546598 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.mseb.2021.115434" target="_blank" >https://doi.org/10.1016/j.mseb.2021.115434</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mseb.2021.115434" target="_blank" >10.1016/j.mseb.2021.115434</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

Popis výsledku v původním jazyce

The effect of silicon oxynitride (SiON) layer on the thermally-induced stress of diamond-coated AlGaN/GaN heterostructures was studied by Raman and SIMS spectroscopy. Diamond films (0.8 or 2.8 µm in thickness) were grown by MWCVD on selected areas of AlGaN/GaN/Si substrates with SiON interlayer. The stress in diamond became tensile for the thinner strip in the range of 0÷0.5 GPa and compressive for the thicker strip in the range of -0.6 ÷ -0.1 GPa both measured at temperatures ranging from 50 to 400°C. The applied SiON interlayer positively influenced the induced stress (Δstress decreased by about 0.14 GPa compared to the sample without SiON) independently on the thickness of the diamond film. SIMS depth profiling was applied to analyse the influence of diamond CVD on the AlGaN/GaN interface of SiON passivated samples. As observed, the hydrogen and carbon atoms were trapped in the SiON which acted as a stop layer.

Název v anglickém jazyce

Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

Popis výsledku anglicky

The effect of silicon oxynitride (SiON) layer on the thermally-induced stress of diamond-coated AlGaN/GaN heterostructures was studied by Raman and SIMS spectroscopy. Diamond films (0.8 or 2.8 µm in thickness) were grown by MWCVD on selected areas of AlGaN/GaN/Si substrates with SiON interlayer. The stress in diamond became tensile for the thinner strip in the range of 0÷0.5 GPa and compressive for the thicker strip in the range of -0.6 ÷ -0.1 GPa both measured at temperatures ranging from 50 to 400°C. The applied SiON interlayer positively influenced the induced stress (Δstress decreased by about 0.14 GPa compared to the sample without SiON) independently on the thickness of the diamond film. SIMS depth profiling was applied to analyse the influence of diamond CVD on the AlGaN/GaN interface of SiON passivated samples. As observed, the hydrogen and carbon atoms were trapped in the SiON which acted as a stop layer.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science and Engineering B-Advanced Functional Solid-State Materials

ISSN

0921-5107

e-ISSN

1873-4944

Svazek periodika

273

Číslo periodika v rámci svazku

Nov.

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

115434

Kód UT WoS článku

000702850700008

EID výsledku v databázi Scopus

2-s2.0-85114516498