Photoluminescence excitation of rare earth doped fluoride films by surface plasmon resonance in the Kretschman configuration

Kód výsledku v IS VaVaI

RIV/68378271:_____/15:00455065 - isvavai.cz

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Photoluminescence excitation of rare earth doped fluoride films by surface plasmon resonance in the Kretschman configuration

Popis výsledku v původním jazyce

We report on excitation of the photoluminescence of rare earth doped fluoride by means of the surface plasmon resonance of Al layer. The advantage of this method is high efficiency of the excitation, which is applicable to ultra-thin films. The p-polarized UV diode laser light is coupled to surface plasmon resonance using a fused silica prism in a Kretschman configuration. The angular dependence of reflected intensity is measured using a theta-2theta goniometer. The surface plasmon at resonance condition induces the luminescence in the adjacent doped fluoride layer. The luminescence is collected using a fiber optics and detected by a spectrophotometer. For the experiment, we used pure LiF films and doped by Eu, Pr and Yb. The fluoride layer was deposited on Al-coated fused silica substrate by electron beam evaporation. For the experiment, we prepared several samples with thickness up-to 20 nm.

Název v anglickém jazyce

Photoluminescence excitation of rare earth doped fluoride films by surface plasmon resonance in the Kretschman configuration

Popis výsledku anglicky

We report on excitation of the photoluminescence of rare earth doped fluoride by means of the surface plasmon resonance of Al layer. The advantage of this method is high efficiency of the excitation, which is applicable to ultra-thin films. The p-polarized UV diode laser light is coupled to surface plasmon resonance using a fused silica prism in a Kretschman configuration. The angular dependence of reflected intensity is measured using a theta-2theta goniometer. The surface plasmon at resonance condition induces the luminescence in the adjacent doped fluoride layer. The luminescence is collected using a fiber optics and detected by a spectrophotometer. For the experiment, we used pure LiF films and doped by Eu, Pr and Yb. The fluoride layer was deposited on Al-coated fused silica substrate by electron beam evaporation. For the experiment, we prepared several samples with thickness up-to 20 nm.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

GAP108/11/1312: Vytváření speciálních tenkých vrstev UV-Vis-NIR transparentních dielektric pomocí ablace repetičním kapilárním XUV laserem

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů