Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00452185" target="_blank" >RIV/68378271:_____/16:00452185 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61388955:_____/16:00452185 RIV/00216208:11310/16:10326310 RIV/00216208:11320/16:10326310

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.sse.2015.11.002" target="_blank" >http://dx.doi.org/10.1016/j.sse.2015.11.002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.sse.2015.11.002" target="_blank" >10.1016/j.sse.2015.11.002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage

Popis výsledku v původním jazyce

The electron work function, hole concentration and diffusion length were compared for poly(3-hexylthiophene) polymer (P3HT) that is commonly used for construction of solar cells, and two types of native polythiophene (PT) samples which are prospective candidates for this purpose. The polythiophene samples were prepared from 2 different precursors by thermal or chemical treatment at room temperature. Cyclic voltammetry and work function measurements were used for estimating the concentration of holes. The measured data were evaluated assuming the validity of band theory based on the tight-binding model. Published data on the valence bandwidth were used for calculating the value of the overlap integral which is related to the hole effective mass. Energy band diagrams were constructed for all 3 materials. Finally, the exciton diffusion length, which is a critical parameter for the application of conjugated polymer materials in solar cells, was measured by a modified surface photovoltage method. The approach allowed us to identify the differences in the material properties related to the processing method. Morphology of the samples determined by AFM was another tool showing these differences. It is stated that a native polythiophene prepared by treatment with acids is a prospective material for solar cells and shows a similar quality as that produced by a thermal process.

Název v anglickém jazyce

Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage

Popis výsledku anglicky

The electron work function, hole concentration and diffusion length were compared for poly(3-hexylthiophene) polymer (P3HT) that is commonly used for construction of solar cells, and two types of native polythiophene (PT) samples which are prospective candidates for this purpose. The polythiophene samples were prepared from 2 different precursors by thermal or chemical treatment at room temperature. Cyclic voltammetry and work function measurements were used for estimating the concentration of holes. The measured data were evaluated assuming the validity of band theory based on the tight-binding model. Published data on the valence bandwidth were used for calculating the value of the overlap integral which is related to the hole effective mass. Energy band diagrams were constructed for all 3 materials. Finally, the exciton diffusion length, which is a critical parameter for the application of conjugated polymer materials in solar cells, was measured by a modified surface photovoltage method. The approach allowed us to identify the differences in the material properties related to the processing method. Morphology of the samples determined by AFM was another tool showing these differences. It is stated that a native polythiophene prepared by treatment with acids is a prospective material for solar cells and shows a similar quality as that produced by a thermal process.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA14-05053S" target="_blank" >GA14-05053S: Příprava a vlastnosti nanokrystalického diamantu pro fotonické aplikace</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solid-State Electronics

ISSN

0038-1101

e-ISSN

—

Svazek periodika

116

Číslo periodika v rámci svazku

FEB 2016

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

111-118

Kód UT WoS článku

000367542100020

EID výsledku v databázi Scopus

2-s2.0-84947606063