Growth and properties of AIII BV QD structures for intermediate band solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00447827" target="_blank" >RIV/68378271:_____/15:00447827 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/15:00447827

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013" target="_blank" >10.1016/j.jcrysgro.2014.11.013</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Growth and properties of AIII BV QD structures for intermediate band solar cells

Popis výsledku v původním jazyce

Intermediate band solar cells theoretically offer a promising way to significantly increase cell efficiency compared to a single-junction solar cell. We focused on the preparation of antimony containing materials as a covering of QD layers. In this paperwe discuss how the concentration gradient of GaAsSb strain reducing layers can influence the resulting optical properties of the solar cell structures. The main principle of the structure is that the absorption of light is achieved at QD excited stateswith better overlap of electron and hole wave functions. With fast relaxation of carriers to the ground state the electrons and holes are quickly spatially separated. Two different composition gradients of GaAsSb SRL were used for the solar cell structure. One or five quantum dot stacks were compared. The maximal PC increased approximately 17 times with increasing number of QD layers from 1 to 5. The results suggest high application potential of this structure for photovoltaics.

Název v anglickém jazyce

Growth and properties of AIII BV QD structures for intermediate band solar cells

Popis výsledku anglicky

Intermediate band solar cells theoretically offer a promising way to significantly increase cell efficiency compared to a single-junction solar cell. We focused on the preparation of antimony containing materials as a covering of QD layers. In this paperwe discuss how the concentration gradient of GaAsSb strain reducing layers can influence the resulting optical properties of the solar cell structures. The main principle of the structure is that the absorption of light is achieved at QD excited stateswith better overlap of electron and hole wave functions. With fast relaxation of carriers to the ground state the electrons and holes are quickly spatially separated. Two different composition gradients of GaAsSb SRL were used for the solar cell structure. One or five quantum dot stacks were compared. The maximal PC increased approximately 17 times with increasing number of QD layers from 1 to 5. The results suggest high application potential of this structure for photovoltaics.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GP14-21285P" target="_blank" >GP14-21285P: Solární články s vloženým pásem</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

414

Číslo periodika v rámci svazku

172

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

172-176

Kód UT WoS článku

000349602900031

EID výsledku v databázi Scopus

2-s2.0-84922496581