An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00458644" target="_blank" >RIV/68378271:_____/16:00458644 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/16:00458644 RIV/44555601:13440/16:43887606

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0741-3335/58/2/025011" target="_blank" >http://dx.doi.org/10.1088/0741-3335/58/2/025011</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0741-3335/58/2/025011" target="_blank" >10.1088/0741-3335/58/2/025011</a>

Jazyk výsledku

angličtina

Název v původním jazyce

An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas

Popis výsledku v původním jazyce

The present paper describes measurements of ion implantation by high-intensity lasers in an innovative configuration. The ion acceleration and implantation were performed using the target normal sheath acceleration regime. Highly ionized charged ions were generated and accelerated by the self-consistent electrostatic accelerating field at the rear side of a directly illuminated foil surface. A sub-nanosecond pulsed laser operating at an intensity of about 10(16) W cm(-2) was employed to irradiate thin foils containing Au atoms. Multi-energy and multi-species ions with energies of the order of 1 MeV per charge state were implanted on exposed substrates of monocrystalline silicon up to a concentration of about 1% Au atoms in the first superficial layers. nThe target, laser parameters and irradiation conditions play a decisive role in the dynamic control of the characteristics of the ion beams to be implanted. The ion penetration depth, the depth profile, the integral amount of implanted ions and the concentration-depth profiles were determined by Rutherford back-scattering analysis. Ion implantation produces Si nanocrystals and Au nanoparticles and induces physical and chemical modifications of the implanted surfaces.

Název v anglickém jazyce

An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas

Popis výsledku anglicky

The present paper describes measurements of ion implantation by high-intensity lasers in an innovative configuration. The ion acceleration and implantation were performed using the target normal sheath acceleration regime. Highly ionized charged ions were generated and accelerated by the self-consistent electrostatic accelerating field at the rear side of a directly illuminated foil surface. A sub-nanosecond pulsed laser operating at an intensity of about 10(16) W cm(-2) was employed to irradiate thin foils containing Au atoms. Multi-energy and multi-species ions with energies of the order of 1 MeV per charge state were implanted on exposed substrates of monocrystalline silicon up to a concentration of about 1% Au atoms in the first superficial layers. nThe target, laser parameters and irradiation conditions play a decisive role in the dynamic control of the characteristics of the ion beams to be implanted. The ion penetration depth, the depth profile, the integral amount of implanted ions and the concentration-depth profiles were determined by Rutherford back-scattering analysis. Ion implantation produces Si nanocrystals and Au nanoparticles and induces physical and chemical modifications of the implanted surfaces.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Plasma Physics and Controlled Fusion

ISSN

0741-3335

e-ISSN

—

Svazek periodika

58

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

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Kód UT WoS článku

000371570900012

EID výsledku v databázi Scopus

2-s2.0-84955319671