Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F17%3A00474564" target="_blank" >RIV/61389005:_____/17:00474564 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/44555601:13440/17:43892826

Výsledek na webu

<a href="http://dx.doi.org/10.1017/S0263034616000860" target="_blank" >http://dx.doi.org/10.1017/S0263034616000860</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1017/S0263034616000860" target="_blank" >10.1017/S0263034616000860</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

Popis výsledku v původním jazyce

This work reports a comparative study of laser ion implantation mainly performed at the Nuclear Physics Institute in Rez (Czech Republic), National Institute of Nuclear Physics (Italy), and the Plasma Physics Laboratory at the University of Messina (Italy) using different approaches. Thick metallic targets were irradiated in vacuum by a focused laser beam to generate plasma-producing multi-energy and multi-species ions. A post-acceleration system was employed in order to increase the energy of the produced ions and to generate ion beams suitable to be implanted in different substrates. The ion dose was controlled by the laser repetition rate and the time of irradiation. Rutherford backscattering analysis was carried out to evaluate the integral amount of implanted ion species, the concentration-depth profiles, the ion penetration depth, and the uniformity of depth profiles for ions laser implanted into monocrystalline substrates. The laser implantation under normal conditions and in post-acceleration configuration will be discussed on the basis of the characterization of the implanted substrates.

Název v anglickém jazyce

Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

Popis výsledku anglicky

This work reports a comparative study of laser ion implantation mainly performed at the Nuclear Physics Institute in Rez (Czech Republic), National Institute of Nuclear Physics (Italy), and the Plasma Physics Laboratory at the University of Messina (Italy) using different approaches. Thick metallic targets were irradiated in vacuum by a focused laser beam to generate plasma-producing multi-energy and multi-species ions. A post-acceleration system was employed in order to increase the energy of the produced ions and to generate ion beams suitable to be implanted in different substrates. The ion dose was controlled by the laser repetition rate and the time of irradiation. Rutherford backscattering analysis was carried out to evaluate the integral amount of implanted ion species, the concentration-depth profiles, the ion penetration depth, and the uniformity of depth profiles for ions laser implanted into monocrystalline substrates. The laser implantation under normal conditions and in post-acceleration configuration will be discussed on the basis of the characterization of the implanted substrates.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Laser and Particle Beams

ISSN

0263-0346

e-ISSN

—

Svazek periodika

35

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

72-80

Kód UT WoS článku

000398536200011

EID výsledku v databázi Scopus

2-s2.0-85007273705