Laser ion deposition and implantation into different substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F17%3A00475929" target="_blank" >RIV/61389005:_____/17:00475929 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Laser ion deposition and implantation into different substrates

Popis výsledku v původním jazyce

High and low intensity lasers generating non equilibrium plasma can be employed to produce ions in the range eV-MeV, suitable for highly localized energy deposition useful for many applications. Multi-energetic metallic ion beams, generated by laser plasma source, can be used to be implanted in different substrates at different depth and fluence. The implanted species, their energy distribution and their current are important parameters, which play a role in the desired compositional, structural, optical mechanical electrical properties of implanted substrates. Multienergetic implantation induced by laser beam can be applied in many fields: to develop advanced hybrid material based on insulator, semiconductors and metals. To monitor on-line and off-line the ion emission, to monitor off-line plasma characterization as well as depth profiles, defect and nanostructures generated in the implanted substrates. The on-line determination and measurement of generated plasma parameters using time-of-flight detectors and electromagnetic deflection systems such as ion collectors, semiconductors, and ion spectrometers will be also presented. Application of multienergetic ion implantation using various laser beams and their potential application on surface layer modification will be presented and discussed.n

Název v anglickém jazyce

Laser ion deposition and implantation into different substrates

Popis výsledku anglicky

High and low intensity lasers generating non equilibrium plasma can be employed to produce ions in the range eV-MeV, suitable for highly localized energy deposition useful for many applications. Multi-energetic metallic ion beams, generated by laser plasma source, can be used to be implanted in different substrates at different depth and fluence. The implanted species, their energy distribution and their current are important parameters, which play a role in the desired compositional, structural, optical mechanical electrical properties of implanted substrates. Multienergetic implantation induced by laser beam can be applied in many fields: to develop advanced hybrid material based on insulator, semiconductors and metals. To monitor on-line and off-line the ion emission, to monitor off-line plasma characterization as well as depth profiles, defect and nanostructures generated in the implanted substrates. The on-line determination and measurement of generated plasma parameters using time-of-flight detectors and electromagnetic deflection systems such as ion collectors, semiconductors, and ion spectrometers will be also presented. Application of multienergetic ion implantation using various laser beams and their potential application on surface layer modification will be presented and discussed.n

Druh

J_ost - Ostatní články v recenzovaných periodicích

CEP obor

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OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/LM2015056" target="_blank" >LM2015056: Centrum urychlovačů a jaderných analytických metod</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Zpravodaj ČVS

ISSN

1213-2705

e-ISSN

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Svazek periodika

25

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

9

Strana od-do

23-31

Kód UT WoS článku

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EID výsledku v databázi Scopus

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