High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00445830" target="_blank" >RIV/68378271:_____/15:00445830 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/15:00445830 RIV/44555601:13440/15:43886723

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nimb.2014.11.082" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2014.11.082</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2014.11.082" target="_blank" >10.1016/j.nimb.2014.11.082</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

Popis výsledku v původním jazyce

In the present work, we performed study of ion implantation into different substrates by using a high-intensity laser at the PALS laboratory in Prague. Multi-energy ions generated by plasma from Ta and Ag targets were implanted into polyethylene and metallic substrates (Al, Ti) at energies of tens of keV per charge state. The ion emission was monitored online using time-of-flight detectors and electromagnetic deflection systems. Rutherford Backscattering Spectrometry was used to characterise the elemental composition in the implanted substrates by ion plasma emission and to provide the implanted ion depth profiling. These last measurements enable offline plasma characterisation and provide information on the useful potentiality of multi-ion species andmulti-energy ion implantation into different substrates. XPS analysis gives information on the chemical bonds and their modifications in the first superficial implanted layers. The depth distributions of implanted Ta and Ag ions were com

Název v anglickém jazyce

High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

Popis výsledku anglicky

In the present work, we performed study of ion implantation into different substrates by using a high-intensity laser at the PALS laboratory in Prague. Multi-energy ions generated by plasma from Ta and Ag targets were implanted into polyethylene and metallic substrates (Al, Ti) at energies of tens of keV per charge state. The ion emission was monitored online using time-of-flight detectors and electromagnetic deflection systems. Rutherford Backscattering Spectrometry was used to characterise the elemental composition in the implanted substrates by ion plasma emission and to provide the implanted ion depth profiling. These last measurements enable offline plasma characterisation and provide information on the useful potentiality of multi-ion species andmulti-energy ion implantation into different substrates. XPS analysis gives information on the chemical bonds and their modifications in the first superficial implanted layers. The depth distributions of implanted Ta and Ag ions were com

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

—

Svazek periodika

354

Číslo periodika v rámci svazku

JUL

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

56-59

Kód UT WoS článku

000356193900013

EID výsledku v databázi Scopus

2-s2.0-84918841873