Surface ion implantation induced by laser-generated plasmas

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F10%3A00435179" target="_blank" >RIV/61389021:_____/10:00435179 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1080/10420151003722560" target="_blank" >http://dx.doi.org/10.1080/10420151003722560</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1080/10420151003722560" target="_blank" >10.1080/10420151003722560</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface ion implantation induced by laser-generated plasmas

Popis výsledku v původním jazyce

Surface ion implantation induced by laser-generated plasmas was investigated using the PALS Prague laser facilities. Cu, Ge, Ag and Ta ions were obtained through the ablation of solid targets in vacuum by means of 1015W/cm2 laser pulses. Energetic ions (0.1-1MeV) were implanted on different substrate surfaces (Si, C, Al, Ti and polyethylene) placed at different distances from the target and angles from the normal to the target surface. In order to increase the ion dose, implantation was performed by using more laser shots in the same experimental conditions. An ion energy analyzer was employed for online measurements of the ion energies and charge states produced by the laser plasma. Off-line Rutherford backscattering spectroscopy (RBS) of alpha particles allowed us to determine the ion depth profiles, the ion energies and the ion amount implanted on the substrate surfaces. RBS spectra have shown typical implanted deep profiles only for substrates placed along the normal to the

Název v anglickém jazyce

Surface ion implantation induced by laser-generated plasmas

Popis výsledku anglicky

Surface ion implantation induced by laser-generated plasmas was investigated using the PALS Prague laser facilities. Cu, Ge, Ag and Ta ions were obtained through the ablation of solid targets in vacuum by means of 1015W/cm2 laser pulses. Energetic ions (0.1-1MeV) were implanted on different substrate surfaces (Si, C, Al, Ti and polyethylene) placed at different distances from the target and angles from the normal to the target surface. In order to increase the ion dose, implantation was performed by using more laser shots in the same experimental conditions. An ion energy analyzer was employed for online measurements of the ion energies and charge states produced by the laser plasma. Off-line Rutherford backscattering spectroscopy (RBS) of alpha particles allowed us to determine the ion depth profiles, the ion energies and the ion amount implanted on the substrate surfaces. RBS spectra have shown typical implanted deep profiles only for substrates placed along the normal to the

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radiation Effects and Defects in Solids

ISSN

1042-0150

e-ISSN

—

Svazek periodika

165

Číslo periodika v rámci svazku

6-10

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

534-542

Kód UT WoS článku

000281854500019

EID výsledku v databázi Scopus

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