Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00458956" target="_blank" >RIV/68378271:_____/16:00458956 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1063/1.4940739" target="_blank" >http://dx.doi.org/10.1063/1.4940739</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4940739" target="_blank" >10.1063/1.4940739</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance
Popis výsledku v původním jazyce
We have studied the temperature behavior of the electron spin resonance (ESR) spectra of nitrogen (N) donors in n-type 6H SiC crystals grown by Lely and sublimation sandwich methods (SSM) with donor concentration of 1017cm-3 at T60–150 K. A broad signal in the ESR spectrum was observed at T 80K with Lorentzian lineshape and gjj2.0043(3), g?2.0030(3), which was previously assigned in the literature to the N donors in the 1s(E) excited state. Based on the analysis of the ESR lineshape, linewidth and g-tensor we attribute this signal to the conduction electrons (CE). The emergence of the CE ESR signal at T>80K was explained by the ionization of electrons from the 1s(A1) ground and 1s(E) excited states of N donors to the conduction band while the observed reduction of the hyperfine (hf) splitting for the Nk1,k2 donors with the temperature increase is attributed to the motional narrowing effect of the hf splitting.n
Název v anglickém jazyce
Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance
Popis výsledku anglicky
We have studied the temperature behavior of the electron spin resonance (ESR) spectra of nitrogen (N) donors in n-type 6H SiC crystals grown by Lely and sublimation sandwich methods (SSM) with donor concentration of 1017cm-3 at T60–150 K. A broad signal in the ESR spectrum was observed at T 80K with Lorentzian lineshape and gjj2.0043(3), g?2.0030(3), which was previously assigned in the literature to the N donors in the 1s(E) excited state. Based on the analysis of the ESR lineshape, linewidth and g-tensor we attribute this signal to the conduction electrons (CE). The emergence of the CE ESR signal at T>80K was explained by the ionization of electrons from the 1s(A1) ground and 1s(E) excited states of N donors to the conduction band while the observed reduction of the hyperfine (hf) splitting for the Nk1,k2 donors with the temperature increase is attributed to the motional narrowing effect of the hf splitting.n
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2016
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
—
Svazek periodika
119
Číslo periodika v rámci svazku
4
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
7
Strana od-do
—
Kód UT WoS článku
000369896300044
EID výsledku v databázi Scopus
2-s2.0-84961323188