Role of the paramagnetic donor-like defects in the high n-type conductivity of the hydrogenated ZnO microparticles

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00539389" target="_blank" >RIV/68378271:_____/20:00539389 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0317095" target="_blank" >http://hdl.handle.net/11104/0317095</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41598-020-74449-3" target="_blank" >10.1038/s41598-020-74449-3</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Role of the paramagnetic donor-like defects in the high n-type conductivity of the hydrogenated ZnO microparticles

Popis výsledku v původním jazyce

The magnetic and electronic properties of the hydrogenated highly conductive ZnO microparticles were investigated by electron paramagnetic resonance (EPR) and contactless MW conductivity techniques. The Lorentzian EPR line with giso=1.9623 was related to the singly ionized VO. The Lorentzian line with g||=1.9581, g⊥=1.9562 was attributed to the Zni shallow donor center, and EPR signal with g||=1.9567, g⊥=1.9556 and Gaussian lineshape was assigned to Hi shallow effective-mass-like donor. The EPR signal with g||=1.9538, g⊥=1.9556 and Lorentzian lineshape was attributed to the shallow donor center. Two conduction mechanisms: ionization of electrons from the shallow donors to the conduction band and hopping conduction process were distinguished. The hopping conduction process follows Mott’s VRH T−1/4 law at 10-100 K. The evaluated values of the average hopping distance and hopping energy enable us to estimate the donor concentration in the ZnO microparticles as ~ 1018 cm−3.n

Název v anglickém jazyce

Role of the paramagnetic donor-like defects in the high n-type conductivity of the hydrogenated ZnO microparticles

Popis výsledku anglicky

The magnetic and electronic properties of the hydrogenated highly conductive ZnO microparticles were investigated by electron paramagnetic resonance (EPR) and contactless MW conductivity techniques. The Lorentzian EPR line with giso=1.9623 was related to the singly ionized VO. The Lorentzian line with g||=1.9581, g⊥=1.9562 was attributed to the Zni shallow donor center, and EPR signal with g||=1.9567, g⊥=1.9556 and Gaussian lineshape was assigned to Hi shallow effective-mass-like donor. The EPR signal with g||=1.9538, g⊥=1.9556 and Lorentzian lineshape was attributed to the shallow donor center. Two conduction mechanisms: ionization of electrons from the shallow donors to the conduction band and hopping conduction process were distinguished. The hopping conduction process follows Mott’s VRH T−1/4 law at 10-100 K. The evaluated values of the average hopping distance and hopping energy enable us to estimate the donor concentration in the ZnO microparticles as ~ 1018 cm−3.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scientific Reports

ISSN

2045-2322

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

000582704600022

EID výsledku v databázi Scopus

2-s2.0-85092558792