Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors

Kód výsledku v IS VaVaI

RIV/68378271:_____/16:00459021 - isvavai.cz

Nalezeny alternativní kódy

RIV/67985823:_____/16:00459021 RIV/61389005:_____/16:00459021 RIV/68407700:21230/16:00302981

Výsledek na webu

http://dx.doi.org/10.1016/j.diamond.2015.10.015

DOI - Digital Object Identifier

10.1016/j.diamond.2015.10.015

Jazyk výsledku

angličtina

Název v původním jazyce

Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors

Popis výsledku v původním jazyce

Diamond is considered as a promising tissue equivalent material in radiation therapies as well as for bioelectronic sensors due to its unique set of properties. These features are combined in this work where effects of gamma irradiation on function and stability of microscopic hydrogen-terminated diamond solution-gated field effect transistors are studied. The H-diamond SG-FETs were prepared using 300 nm thin diamond films deposited on glass by microwave plasma. Prior to gamma irradiation they were interfaced to proteins and cells in cell growth medium. Blank H-diamond SG-FETs did not degrade after the irradiation. With adsorbed proteins and cells they showed specific changes in gate current characteristics after the irradiation. These changes are attributed to modified protein layer and cell morphology on the diamond surface. The presented results establish a first step towards real-time electronicmonitoring of cell growth during the irradiation by therapeutically relevant doses.

Název v anglickém jazyce

Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors

Popis výsledku anglicky

Diamond is considered as a promising tissue equivalent material in radiation therapies as well as for bioelectronic sensors due to its unique set of properties. These features are combined in this work where effects of gamma irradiation on function and stability of microscopic hydrogen-terminated diamond solution-gated field effect transistors are studied. The H-diamond SG-FETs were prepared using 300 nm thin diamond films deposited on glass by microwave plasma. Prior to gamma irradiation they were interfaced to proteins and cells in cell growth medium. Blank H-diamond SG-FETs did not degrade after the irradiation. With adsorbed proteins and cells they showed specific changes in gate current characteristics after the irradiation. These changes are attributed to modified protein layer and cell morphology on the diamond surface. The presented results establish a first step towards real-time electronicmonitoring of cell growth during the irradiation by therapeutically relevant doses.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BO - Biofyzika

OECD FORD obor

—

Projekt

GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

—

Svazek periodika

63

Číslo periodika v rámci svazku

Mar

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

186-191

Kód UT WoS článku

000371942700034

EID výsledku v databázi Scopus

2-s2.0-84959204564