Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology

Popis výsledku v původním jazyce

Nitride semiconductors are the most studied materials nowadays because of their exceptional properties and possible applications. They can be used as light emitting diodes or transistors depending on the material used. A typical feature of the nitride luminescence spectra is a presence of defect interband levels luminescence band. For the luminescence and scintillating applications, it is desirable that the structure has quick response and the decay time is very short, in the order of few nanoseconds. This is the reason why the slow yellow luminescence band is undesirable. It has also high intensity, so it completely shadows the photolumi–nescence of other wavelengths.nIn this work studies of two structures will be presented and discussed, mainly the photoluminescence spectra with yellow band luminescence, its origin and some possible solutions to avoid it. First one is the AlGaN/GaN heterostructure. There the connection between v-pits on layer interfaces and yellow luminescence band will be inferred. Second one is the InGaN/GaN heterostructure where the yellow luminescence band is changing its intensity, compared to the photoluminescence of GaN, with changing the excitation intensity, see Fig. 1. Possible explanation will be offered.n

Název v anglickém jazyce

Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology

Popis výsledku anglicky

Nitride semiconductors are the most studied materials nowadays because of their exceptional properties and possible applications. They can be used as light emitting diodes or transistors depending on the material used. A typical feature of the nitride luminescence spectra is a presence of defect interband levels luminescence band. For the luminescence and scintillating applications, it is desirable that the structure has quick response and the decay time is very short, in the order of few nanoseconds. This is the reason why the slow yellow luminescence band is undesirable. It has also high intensity, so it completely shadows the photolumi–nescence of other wavelengths.nIn this work studies of two structures will be presented and discussed, mainly the photoluminescence spectra with yellow band luminescence, its origin and some possible solutions to avoid it. First one is the AlGaN/GaN heterostructure. There the connection between v-pits on layer interfaces and yellow luminescence band will be inferred. Second one is the InGaN/GaN heterostructure where the yellow luminescence band is changing its intensity, compared to the photoluminescence of GaN, with changing the excitation intensity, see Fig. 1. Possible explanation will be offered.n

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů