Passivation effect of water vapour on thin film polycrystalline Si solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00469471" target="_blank" >RIV/68378271:_____/16:00469471 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssa.201533006" target="_blank" >http://dx.doi.org/10.1002/pssa.201533006</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssa.201533006" target="_blank" >10.1002/pssa.201533006</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Passivation effect of water vapour on thin film polycrystalline Si solar cells

Popis výsledku v původním jazyce

We investigated a passivation of both surface and bulk of polycrystalline silicon films by water vapour by Suns-VOC method to measure the open-circuit voltage. A sufficiently high temperature (350–450 °C) is necessary for a successful silicon passivation. Different gases were tested beside water vapour (H2, H2 + H2O, O2 + H2O, air) but none of them resulted in higher VOC than pure steam (360 mV from starting 220 mV). Results from Fourier transform infrared spectroscopy indicate that water vapour passivation is rather oxidation while hydrogen plays a significant supporting role in the process. Water vapour is able to passivate defects in the whole silicon volume, but its passivation effect is not strong enough to become an adequate alternative to the plasma hydrogenation with the best result of VOC ∼497 mV. On the other hand, it provides advantage of simplicity (no vacuum system and deionised water steam as the only input).

Název v anglickém jazyce

Passivation effect of water vapour on thin film polycrystalline Si solar cells

Popis výsledku anglicky

We investigated a passivation of both surface and bulk of polycrystalline silicon films by water vapour by Suns-VOC method to measure the open-circuit voltage. A sufficiently high temperature (350–450 °C) is necessary for a successful silicon passivation. Different gases were tested beside water vapour (H2, H2 + H2O, O2 + H2O, air) but none of them resulted in higher VOC than pure steam (360 mV from starting 220 mV). Results from Fourier transform infrared spectroscopy indicate that water vapour passivation is rather oxidation while hydrogen plays a significant supporting role in the process. Water vapour is able to passivate defects in the whole silicon volume, but its passivation effect is not strong enough to become an adequate alternative to the plasma hydrogenation with the best result of VOC ∼497 mV. On the other hand, it provides advantage of simplicity (no vacuum system and deionised water steam as the only input).

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi. A

ISSN

1862-6300

e-ISSN

—

Svazek periodika

213

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

6

Strana od-do

1969-1975

Kód UT WoS článku

000385222900048

EID výsledku v databázi Scopus

2-s2.0-84992299642