Resistive switch mechanism of Au/ZnO/Au crossbar structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471058" target="_blank" >RIV/68378271:_____/16:00471058 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Resistive switch mechanism of Au/ZnO/Au crossbar structure

Popis výsledku v původním jazyce

In this paper, this resistive switch mechanism of the Au/ZnO/Au crossbar structure was investigated. Au has been considered as a good metallic electrode for its low oxygen affinity and high stability. Au/ZnO/Au crossbar was deposited using sputtering. The crossbar area size is 100 um2 with ZnO layer thickness ∼140 nm and Au electrodes layer ∼60 nm. The bipolar resistive switching behavior can be observed in our device, which the set voltage (VSET) and the reset voltage (VRESET) is -2.25V. By further electrical transport analysis, the space-charge-limited-current (SCLC) dominate the carrier transport in the high resistance state (HRS). On the other, low resistance (LRS) is follow the ohmic transport. Our resultnshows that the oxygen ion migration plays an important role in the resistive switch mechanism.

Název v anglickém jazyce

Resistive switch mechanism of Au/ZnO/Au crossbar structure

Popis výsledku anglicky

In this paper, this resistive switch mechanism of the Au/ZnO/Au crossbar structure was investigated. Au has been considered as a good metallic electrode for its low oxygen affinity and high stability. Au/ZnO/Au crossbar was deposited using sputtering. The crossbar area size is 100 um2 with ZnO layer thickness ∼140 nm and Au electrodes layer ∼60 nm. The bipolar resistive switching behavior can be observed in our device, which the set voltage (VSET) and the reset voltage (VRESET) is -2.25V. By further electrical transport analysis, the space-charge-limited-current (SCLC) dominate the carrier transport in the high resistance state (HRS). On the other, low resistance (LRS) is follow the ohmic transport. Our resultnshows that the oxygen ion migration plays an important role in the resistive switch mechanism.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů