Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F16%3APU120621" target="_blank" >RIV/00216305:26620/16:PU120621 - isvavai.cz</a>

Výsledek na webu

<a href="http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/admi.201600512" target="_blank" >10.1002/admi.201600512</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Popis výsledku v původním jazyce

An array of semiconducting tungsten-oxide (WOx) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modified by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnected via gold electrodeposited inside and over the pores. Thus formed metal/semiconductor/metal microdevices are used for studying electron transport within the nanorods and across the multiplied nanoscale Au/WOx and W/WOx interfaces. The dominating effect of a Schottky junction that forms at the Au/WOx interface is justified for the as-anodized and air-annealed nanorods tested at room temperature, which transforms into an ohmic contact at elevated temperature, whereas the bottom W/WOx interface turns out to be Schottky-like and govern the electron transport, giving a higher barrier and a set of pronounced diode-like characteristics in the as-anodized nanoarrays. The amorphous nanorods reveal bipolar resistive switching with a gradual reset due to the field-driven movement of oxygen vacancies and induced modifications of the Au/WOx Schottky interface. The unique electrical and interfacial properties of the nanoscale Au/WOx/W multijunctions form a basis for their application in emerging resistive random access memories or 3D gas-sensing nanodevices.

Název v anglickém jazyce

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Popis výsledku anglicky

An array of semiconducting tungsten-oxide (WOx) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modified by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnected via gold electrodeposited inside and over the pores. Thus formed metal/semiconductor/metal microdevices are used for studying electron transport within the nanorods and across the multiplied nanoscale Au/WOx and W/WOx interfaces. The dominating effect of a Schottky junction that forms at the Au/WOx interface is justified for the as-anodized and air-annealed nanorods tested at room temperature, which transforms into an ohmic contact at elevated temperature, whereas the bottom W/WOx interface turns out to be Schottky-like and govern the electron transport, giving a higher barrier and a set of pronounced diode-like characteristics in the as-anodized nanoarrays. The amorphous nanorods reveal bipolar resistive switching with a gradual reset due to the field-driven movement of oxygen vacancies and induced modifications of the Au/WOx Schottky interface. The unique electrical and interfacial properties of the nanoscale Au/WOx/W multijunctions form a basis for their application in emerging resistive random access memories or 3D gas-sensing nanodevices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Materials Interfaces

ISSN

2196-7350

e-ISSN

—

Svazek periodika

3

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

12

Strana od-do

1600512-1600524

Kód UT WoS článku

000386058100023

EID výsledku v databázi Scopus

2-s2.0-84983611299