The formation-properties of porous-alumina-embedded hafnium-oxide nanorod arrays

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU134838" target="_blank" >RIV/00216305:26620/19:PU134838 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

The formation-properties of porous-alumina-embedded hafnium-oxide nanorod arrays

Popis výsledku v původním jazyce

Hafnium-oxide film with the self-organized nanostructured 3-dimentional architecture is synthesized via the anodizing of thin Al-Hf layers in a phosphoric acid electrolyte. The process involves the growth of a porous alumina film, followed by pore-assisted oxidation of the Hf underlayer. The film consists of HfOx nanorods anchored to continuous hafnium-oxide bottom layer that forms under the pores. Post-anodizing treatments include annealing at 600C in air or vacuum. From the EIS measurements and Mott-Schottky analysis of the as anodized and air-annealed films, the bottom oxide behaves as a good dielectric whereas the nanorods exhibit semiconducting properties. The annealing in vacuum makes the film fully semiconducting, with a unique gradient in film crystal structure, composition, and properties across the film thickness. Potential applications are as dielectrics for electrolytic or on-chip capacitors, and as active layers for gas microsensors

Název v anglickém jazyce

The formation-properties of porous-alumina-embedded hafnium-oxide nanorod arrays

Popis výsledku anglicky

Hafnium-oxide film with the self-organized nanostructured 3-dimentional architecture is synthesized via the anodizing of thin Al-Hf layers in a phosphoric acid electrolyte. The process involves the growth of a porous alumina film, followed by pore-assisted oxidation of the Hf underlayer. The film consists of HfOx nanorods anchored to continuous hafnium-oxide bottom layer that forms under the pores. Post-anodizing treatments include annealing at 600C in air or vacuum. From the EIS measurements and Mott-Schottky analysis of the as anodized and air-annealed films, the bottom oxide behaves as a good dielectric whereas the nanorods exhibit semiconducting properties. The annealing in vacuum makes the film fully semiconducting, with a unique gradient in film crystal structure, composition, and properties across the film thickness. Potential applications are as dielectrics for electrolytic or on-chip capacitors, and as active layers for gas microsensors

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

<a href="/cs/project/GA17-13732S" target="_blank" >GA17-13732S: Multifunkční pole nanodrátků z elektrokeramických materiálů na bázi HfO2 a ZrO2 vysoce uspořádaných na substrátu (ZiHaN)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of 7th International Conference on ADVANCES IN ELECTRONIC AND PHOTONIC TECHNOLOGIES

ISBN

978-80-554-1568-0

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

19-22

Název nakladatele

University of Zilina in EDIS - Publishing Centre of UZ

Místo vydání

Zilina, Slobak republic

Místo konání akce

Žilina

Datum konání akce

1. 6. 2015

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

—