The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU134582" target="_blank" >RIV/00216305:26620/19:PU134582 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0013468619319000?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0013468619319000?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.electacta.2019.135029" target="_blank" >10.1016/j.electacta.2019.135029</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

Popis výsledku v původním jazyce

Hafnium-oxide nanostructures of controlled composition and properties are in demand for modern electronic and optical engineering. Here hafnium-oxide nanostructured films are synthesized on substrates via the anodizing/re-anodizing of a thin Hf layer through a porous anodic alumina (PAA) film in 0.2 M H3PO4 electrolyte and examined by SEM, EIS, and Mott-Schottky analysis. The films are composed of HfO nanorods, which grow in the pores, anchored to a continuous HfO2 bottom layer by tiny HfOx nanoroots penetrating the alumina barrier layer. The understanding of film nucleation and growth is advanced through disclosing the hidden features and field-assisted modifications of the metaloxide interfaces, such as O-2-filled nanosized voids and individual hafnium-oxide nanoroots dominating within the alumina barrier layer and securing electron transport to each nanorod. The films reveal a unique combination of electrical properties, such that the bottom oxide behaves like an ideal dielectric whereas the roots and rods show semiconducting behavior. Potential applications include high-k dielectrics for high-voltage electrolytic capacitors, semiconducting active layers for gas sensing, or photoanodes for photoelectrochemical water splitting.

Název v anglickém jazyce

The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

Popis výsledku anglicky

Hafnium-oxide nanostructures of controlled composition and properties are in demand for modern electronic and optical engineering. Here hafnium-oxide nanostructured films are synthesized on substrates via the anodizing/re-anodizing of a thin Hf layer through a porous anodic alumina (PAA) film in 0.2 M H3PO4 electrolyte and examined by SEM, EIS, and Mott-Schottky analysis. The films are composed of HfO nanorods, which grow in the pores, anchored to a continuous HfO2 bottom layer by tiny HfOx nanoroots penetrating the alumina barrier layer. The understanding of film nucleation and growth is advanced through disclosing the hidden features and field-assisted modifications of the metaloxide interfaces, such as O-2-filled nanosized voids and individual hafnium-oxide nanoroots dominating within the alumina barrier layer and securing electron transport to each nanorod. The films reveal a unique combination of electrical properties, such that the bottom oxide behaves like an ideal dielectric whereas the roots and rods show semiconducting behavior. Potential applications include high-k dielectrics for high-voltage electrolytic capacitors, semiconducting active layers for gas sensing, or photoanodes for photoelectrochemical water splitting.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Electrochimica Acta

ISSN

0013-4686

e-ISSN

1873-3859

Svazek periodika

327

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

1-12

Kód UT WoS článku

000494834100042

EID výsledku v databázi Scopus

2-s2.0-85073293877