Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F18%3APU127829" target="_blank" >RIV/00216305:26620/18:PU127829 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/acs.chemmater.8b00188" target="_blank" >http://dx.doi.org/10.1021/acs.chemmater.8b00188</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.chemmater.8b00188" target="_blank" >10.1021/acs.chemmater.8b00188</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

Popis výsledku v původním jazyce

Hafnium-oxide films with self-organized nanostructured 3-D architectures and variable dimension (10 to 400 nm) are synthesized via the high-current anodizing of thin aluminum-on-hafnium layers in phosphoric, malonic, and oxalic acid electrolytes. In the approach, the self-organized growth of a porous anodic alumina (PAA) film is immediately followed by the fast PAA-assisted reanodizing of the hafnium underlayer. The PAA-dissolved films consist of arrays of upright-standing hafnium-oxide nanorods held on the substrate by the tiny needle-like "nanoroots" widespread over a continuous hafnium-oxide bottom layer. The roots are amorphous Hf2O3, while the rods are amorphous HfO2-Hf2O3-Al2O3 mixed oxides, the bottom layer being, however, highly textured nanocrystalline HfO2. The calculated transport numbers for O2- and Hf4+(3)+ ions are, respectively, ∼0.55 and ∼0.45, which is a unique situation for anodic hafnium oxide, which normally grows by O2- transport only. Annealing the films in air at 600 °C oxidizes the remaining Hf metal to polycrystalline HfO2, still leaving the roots and rods amorphous. The annealing in vacuum results in partial oxide reduction and crystallization of the roots and rods to stable orthorhombic and monoclinic HfO2 phases. A model of the anodic film growth and solid-state ionic transport is proposed and experimentally justified. Potential applications of the 3-D hafnium-oxide nanofilms are in advanced electronic, photonic, or magnetic micro- and nanodevices.

Název v anglickém jazyce

Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

Popis výsledku anglicky

Hafnium-oxide films with self-organized nanostructured 3-D architectures and variable dimension (10 to 400 nm) are synthesized via the high-current anodizing of thin aluminum-on-hafnium layers in phosphoric, malonic, and oxalic acid electrolytes. In the approach, the self-organized growth of a porous anodic alumina (PAA) film is immediately followed by the fast PAA-assisted reanodizing of the hafnium underlayer. The PAA-dissolved films consist of arrays of upright-standing hafnium-oxide nanorods held on the substrate by the tiny needle-like "nanoroots" widespread over a continuous hafnium-oxide bottom layer. The roots are amorphous Hf2O3, while the rods are amorphous HfO2-Hf2O3-Al2O3 mixed oxides, the bottom layer being, however, highly textured nanocrystalline HfO2. The calculated transport numbers for O2- and Hf4+(3)+ ions are, respectively, ∼0.55 and ∼0.45, which is a unique situation for anodic hafnium oxide, which normally grows by O2- transport only. Annealing the films in air at 600 °C oxidizes the remaining Hf metal to polycrystalline HfO2, still leaving the roots and rods amorphous. The annealing in vacuum results in partial oxide reduction and crystallization of the roots and rods to stable orthorhombic and monoclinic HfO2 phases. A model of the anodic film growth and solid-state ionic transport is proposed and experimentally justified. Potential applications of the 3-D hafnium-oxide nanofilms are in advanced electronic, photonic, or magnetic micro- and nanodevices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

CHEMISTRY OF MATERIALS

ISSN

0897-4756

e-ISSN

1520-5002

Svazek periodika

30

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

15

Strana od-do

2694-2708

Kód UT WoS článku

000431088400026

EID výsledku v databázi Scopus

—