HfO2 nanostructure arrays via porous-alumina-assisted anodization of hafnium layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU126280" target="_blank" >RIV/00216305:26620/17:PU126280 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

HfO2 nanostructure arrays via porous-alumina-assisted anodization of hafnium layers

Popis výsledku v původním jazyce

Hafnium dioxide (HfO2) due to its excellent electrical and optical properties complemented by chemical and thermal stability is a promising material in the fields of electroceramics, optics, and electronics. Nanostructuring of hafnium oxide opens more opportunities for creating functional materials with new properties and applications. Here we report, for the first time, the formation of HfO2 nanostructures aligned on substrates via the porous-anodic-alumina (PAA)-assisted anodization of hafnium layers prepared by magnetron sputtering. A layer of Hf followed by a layer of Al sputtered onto a SiO2 substrate (an Al/Hf bilayer) is used as the initial sample. In the anodizing approach, the aluminum layer is first converted to PAA [ ], then the Hf film is oxidized through the alumina nanopores. A major difficulty is that anodic HfO2 films are crystalline, and the transport number for Hf4+ cation is almost zero (0.05). These result in undesired oxygen evolution and hinder oxide penetration into the pores. To

Název v anglickém jazyce

HfO2 nanostructure arrays via porous-alumina-assisted anodization of hafnium layers

Popis výsledku anglicky

Hafnium dioxide (HfO2) due to its excellent electrical and optical properties complemented by chemical and thermal stability is a promising material in the fields of electroceramics, optics, and electronics. Nanostructuring of hafnium oxide opens more opportunities for creating functional materials with new properties and applications. Here we report, for the first time, the formation of HfO2 nanostructures aligned on substrates via the porous-anodic-alumina (PAA)-assisted anodization of hafnium layers prepared by magnetron sputtering. A layer of Hf followed by a layer of Al sputtered onto a SiO2 substrate (an Al/Hf bilayer) is used as the initial sample. In the anodizing approach, the aluminum layer is first converted to PAA [ ], then the Hf film is oxidized through the alumina nanopores. A major difficulty is that anodic HfO2 films are crystalline, and the transport number for Hf4+ cation is almost zero (0.05). These result in undesired oxygen evolution and hinder oxide penetration into the pores. To

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

<a href="/cs/project/GA17-13732S" target="_blank" >GA17-13732S: Multifunkční pole nanodrátků z elektrokeramických materiálů na bázi HfO2 a ZrO2 vysoce uspořádaných na substrátu (ZiHaN)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů