Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00476233" target="_blank" >RIV/68378271:_____/17:00476233 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jlumin.2017.05.050" target="_blank" >http://dx.doi.org/10.1016/j.jlumin.2017.05.050</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jlumin.2017.05.050" target="_blank" >10.1016/j.jlumin.2017.05.050</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Popis výsledku v původním jazyce

Photoluminescence characteristics of Gd3Ga5O12:Bi single crystalline films with different Bi contents grown by the liquid phase epitaxy are studied by the steady-state and time-resolved luminescence spectroscopy methods in the 4.2–500 K temperature range under excitation within the 3.8–6.0 eV. No ultraviolet emission, which could be ascribed to the radiative decay of the triplet excited state of Bi3+, is observed. Only visible emission is shown to arise from the Bi3+–related luminescence centers. Both the intense 2.54 eV emission and the weaker 2.46 eV emission of Gd3Ga5O12:Bi are shown to be of exciton origin. The characteristic parameters of the corresponding exciton states are determined. The photostimulated processes, resulting in the localized excitons formation under excitation in the Bi3+–related absorption bands, are discussed.

Název v anglickém jazyce

Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Popis výsledku anglicky

Photoluminescence characteristics of Gd3Ga5O12:Bi single crystalline films with different Bi contents grown by the liquid phase epitaxy are studied by the steady-state and time-resolved luminescence spectroscopy methods in the 4.2–500 K temperature range under excitation within the 3.8–6.0 eV. No ultraviolet emission, which could be ascribed to the radiative decay of the triplet excited state of Bi3+, is observed. Only visible emission is shown to arise from the Bi3+–related luminescence centers. Both the intense 2.54 eV emission and the weaker 2.46 eV emission of Gd3Ga5O12:Bi are shown to be of exciton origin. The characteristic parameters of the corresponding exciton states are determined. The photostimulated processes, resulting in the localized excitons formation under excitation in the Bi3+–related absorption bands, are discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA16-15569S" target="_blank" >GA16-15569S: Rychlé tenkovrstvé scintilátory pro 2D-zobrazování s vysokým rozlišením</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Luminescence

ISSN

0022-2313

e-ISSN

—

Svazek periodika

190

Číslo periodika v rámci svazku

Oct

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

3

Strana od-do

81-88

Kód UT WoS článku

000405537100014

EID výsledku v databázi Scopus

2-s2.0-85019861751