The hydrogen plasma doping of nanocrystalline ZnO thin flms

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00483629" target="_blank" >RIV/68378271:_____/17:00483629 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

The hydrogen plasma doping of nanocrystalline ZnO thin flms

Popis výsledku v původním jazyce

We study the effect on the optical and electrical properties of hydrogen plasma treatment of the nominally undoped, nanocrystalline ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. After hydrogen plasma treatment, the increase of the electrical conductivity and the increase of the infrared optical absorption was detected and related to the increase of the free carrier concentration. To confirm this relation, the mobility and carrier concentration were measured by temperature dependent electrical resistivity and Hall effect using the van der Pauw method. We also investigated the localized defect states below the optical absorption edge using optical absorption spectroscopy and photoluminescence in a broad spectral range from near UV to near IR. We conclude that the increase of the electrical conductivity is indeed confirmed to be related to the increase of the free carrier concentration.

Název v anglickém jazyce

The hydrogen plasma doping of nanocrystalline ZnO thin flms

Popis výsledku anglicky

We study the effect on the optical and electrical properties of hydrogen plasma treatment of the nominally undoped, nanocrystalline ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. After hydrogen plasma treatment, the increase of the electrical conductivity and the increase of the infrared optical absorption was detected and related to the increase of the free carrier concentration. To confirm this relation, the mobility and carrier concentration were measured by temperature dependent electrical resistivity and Hall effect using the van der Pauw method. We also investigated the localized defect states below the optical absorption edge using optical absorption spectroscopy and photoluminescence in a broad spectral range from near UV to near IR. We conclude that the increase of the electrical conductivity is indeed confirmed to be related to the increase of the free carrier concentration.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů