Electron affinity of B-doped nanocrystalline diamonds

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00486997" target="_blank" >RIV/68378271:_____/17:00486997 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Electron affinity of B-doped nanocrystalline diamonds

Popis výsledku v původním jazyce

Electron affinity in semiconductors is defined as an energy distance from the conduction band minimum (CBM) to the vacuum level. Usually, the vacuum level is above the CBM known as the positive electron affinity (PEA). In case of negative electron affinity (NEA), the CBM is above the vacuum level. Diamond electron affinity (DEA) can be tuned by its surface termination. Here, the dependence of DEA on a) boron doping and b) surface termination is studied by ultraviolet photoelectron spectroscopy (UPS). Boron doped nanocrystalline diamond films (B-NCD) were grown by double bias enhanced hot filament chemical vapor deposition on Si substrate using the gas mixture of trimethylborane and CH4 in H2. The H-termination was done by hydrogen microwave plasma treatment. It was found that, the electron affinity of B-NCD/H surfaces varies with the boron concentration.

Název v anglickém jazyce

Electron affinity of B-doped nanocrystalline diamonds

Popis výsledku anglicky

Electron affinity in semiconductors is defined as an energy distance from the conduction band minimum (CBM) to the vacuum level. Usually, the vacuum level is above the CBM known as the positive electron affinity (PEA). In case of negative electron affinity (NEA), the CBM is above the vacuum level. Diamond electron affinity (DEA) can be tuned by its surface termination. Here, the dependence of DEA on a) boron doping and b) surface termination is studied by ultraviolet photoelectron spectroscopy (UPS). Boron doped nanocrystalline diamond films (B-NCD) were grown by double bias enhanced hot filament chemical vapor deposition on Si substrate using the gas mixture of trimethylborane and CH4 in H2. The H-termination was done by hydrogen microwave plasma treatment. It was found that, the electron affinity of B-NCD/H surfaces varies with the boron concentration.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů