Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00574634" target="_blank" >RIV/68378271:_____/23:00574634 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0347693" target="_blank" >https://hdl.handle.net/11104/0347693</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/smll.202208265" target="_blank" >10.1002/smll.202208265</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry

Popis výsledku v původním jazyce

Polycrystalline B-doped diamond is a promising material for high-power aqueous electrochemical applications. The chemical vapor deposition (CVD) of B-doped diamond is diversified by deuterium substituting habitually applied hydrogen. Deuterium in the CVD plasma affects synthesis reactions and leads to a preferential (111) texture and more effective boron incorporation into the lattice, resulting in one order of magnitude higher density of charge carriers. The relevant mechanisms were studied by high-resolution core-level spectroscopies. A rich set of highly occupied and localized surface states exists for samples deposited in deuterium. The enhanced incorporation of boron into (111) facet of diamond leads to surface electronic states below the Fermi level and above the bulk valence band edge. This band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry.n

Název v anglickém jazyce

Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry

Popis výsledku anglicky

Polycrystalline B-doped diamond is a promising material for high-power aqueous electrochemical applications. The chemical vapor deposition (CVD) of B-doped diamond is diversified by deuterium substituting habitually applied hydrogen. Deuterium in the CVD plasma affects synthesis reactions and leads to a preferential (111) texture and more effective boron incorporation into the lattice, resulting in one order of magnitude higher density of charge carriers. The relevant mechanisms were studied by high-resolution core-level spectroscopies. A rich set of highly occupied and localized surface states exists for samples deposited in deuterium. The enhanced incorporation of boron into (111) facet of diamond leads to surface electronic states below the Fermi level and above the bulk valence band edge. This band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA20-11140S" target="_blank" >GA20-11140S: Základní prvky diamantové výkonové elektroniky</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Small

ISSN

1613-6810

e-ISSN

1613-6829

Svazek periodika

19

Číslo periodika v rámci svazku

26

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

20

Strana od-do

2208265

Kód UT WoS článku

000954781600001

EID výsledku v databázi Scopus

2-s2.0-85150928898