Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00487173" target="_blank" >RIV/68378271:_____/17:00487173 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/17:00310445

Výsledek na webu

<a href="http://dx.doi.org/10.1515/jee-2017-0010" target="_blank" >http://dx.doi.org/10.1515/jee-2017-0010</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1515/jee-2017-0010" target="_blank" >10.1515/jee-2017-0010</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Popis výsledku v původním jazyce

In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 300 K and used to determine the temperature dependence of the zero-phonon-line full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.

Název v anglickém jazyce

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Popis výsledku anglicky

In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 300 K and used to determine the temperature dependence of the zero-phonon-line full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA14-04790S" target="_blank" >GA14-04790S: Vytváření objemu a povrchu diamantových nano-objektů pro biomedicínu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electrical Engineering - Elektrotechnický časopis

ISSN

1335-3632

e-ISSN

—

Svazek periodika

68

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

5

Strana od-do

74-78

Kód UT WoS článku

000396613900010

EID výsledku v databázi Scopus

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