Influence of the growth temperature on the Si-V photoluminescence in diamond thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496473" target="_blank" >RIV/68378271:_____/18:00496473 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/18:00318777

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s00339-018-1643-0" target="_blank" >http://dx.doi.org/10.1007/s00339-018-1643-0</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00339-018-1643-0" target="_blank" >10.1007/s00339-018-1643-0</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of the growth temperature on the Si-V photoluminescence in diamond thin films

Popis výsledku v původním jazyce

The influence of growth temperature on the intensity of Si-V colour centres photoluminescence (PL) was studied in diamond thin films. The films were grown by a microwave plasma enhanced chemical vapour deposition system. The film quality and surface morphology were characterised by Raman spectroscopy and scanning electron microscopy, respectively. For selected samples, the temperature behaviour of steady-state PL emission spectra was studied within the range 11 ÷ 300 K as well. The PL properties are related to the film growth temperature. We found that 800 °C is the optimal growth temperature, at which the highest intensity of the Si-V centre PL was observed. For all the samples, the blue shift in the position of the Si-V centre PL zero-phonon line is observed with decreasing temperature, which is attributed to the effects of lattice contraction and quadratic electron–phonon coupling. The zero-phonon line narrowing is discussed regarding vibrations of the perturbed lattice.n

Název v anglickém jazyce

Influence of the growth temperature on the Si-V photoluminescence in diamond thin films

Popis výsledku anglicky

The influence of growth temperature on the intensity of Si-V colour centres photoluminescence (PL) was studied in diamond thin films. The films were grown by a microwave plasma enhanced chemical vapour deposition system. The film quality and surface morphology were characterised by Raman spectroscopy and scanning electron microscopy, respectively. For selected samples, the temperature behaviour of steady-state PL emission spectra was studied within the range 11 ÷ 300 K as well. The PL properties are related to the film growth temperature. We found that 800 °C is the optimal growth temperature, at which the highest intensity of the Si-V centre PL was observed. For all the samples, the blue shift in the position of the Si-V centre PL zero-phonon line is observed with decreasing temperature, which is attributed to the effects of lattice contraction and quadratic electron–phonon coupling. The zero-phonon line narrowing is discussed regarding vibrations of the perturbed lattice.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC15-22102J" target="_blank" >GC15-22102J: Studium kompozitních materiálů na bázi uhlíku s sp2 a sp3 hybridizacemi</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics A - Materials Science & Processing

ISSN

0947-8396

e-ISSN

—

Svazek periodika

124

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000427202900016

EID výsledku v databázi Scopus

2-s2.0-85041726452