Photoluminescence in wide band gap nanocrystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00540846" target="_blank" >RIV/68378271:_____/18:00540846 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/18:00326543 RIV/68407700:21460/18:00326543

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Photoluminescence in wide band gap nanocrystals

Popis výsledku v původním jazyce

The diamond films were grown by microwave plasma enhanced CVD system. Temperature dependent steady-state photoluminescence (PL) of Si-V centres was measured within the range 11-300 K. PL measurements are correlated with process parameters. It was found that quartz or Si as substrates and substrate temperature of 800°C were the optimal parameters, at which the highest photoluminescence activity of Si-V centre was measured. For all the samples, the temperature dependent PL measurements exhibited the blue shift in zero-phonon line (ZPL) position for lower temperatures and for selected samples, ZPL narrowing were observed. This effect will be discussed from point of temperature behaviour of Si-V electronic transition energy. Temperature development of PL integral intensity was discussed by means of Boltzmann activation process. It suggests the contribution of other centres in luminescence process.n

Název v anglickém jazyce

Photoluminescence in wide band gap nanocrystals

Popis výsledku anglicky

The diamond films were grown by microwave plasma enhanced CVD system. Temperature dependent steady-state photoluminescence (PL) of Si-V centres was measured within the range 11-300 K. PL measurements are correlated with process parameters. It was found that quartz or Si as substrates and substrate temperature of 800°C were the optimal parameters, at which the highest photoluminescence activity of Si-V centre was measured. For all the samples, the temperature dependent PL measurements exhibited the blue shift in zero-phonon line (ZPL) position for lower temperatures and for selected samples, ZPL narrowing were observed. This effect will be discussed from point of temperature behaviour of Si-V electronic transition energy. Temperature development of PL integral intensity was discussed by means of Boltzmann activation process. It suggests the contribution of other centres in luminescence process.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů