Photoluminescence in wide band gap nanocrystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F18%3A00326543" target="_blank" >RIV/68407700:21340/18:00326543 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00540846 RIV/68407700:21460/18:00326543

Výsledek na webu

<a href="https://www.nanocon.eu/en/about-the-conference-history-proceedings-gallery/2018/" target="_blank" >https://www.nanocon.eu/en/about-the-conference-history-proceedings-gallery/2018/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Photoluminescence in wide band gap nanocrystals

Popis výsledku v původním jazyce

In this work, we present photoluminescence (PL) properties of Si-V colour centres in diamond and zinc oxide, which are perspective for life science and photonic applications. The nanocrystalline diamond films were grown by microwave plasma enhanced CVD system, while ZnO nanocrystals were grown by magnetron sputtering. Temperature dependent steady-state PL of Si-V centres was studied within the range 11-300 K. PL properties are correlated with deposition process conditions, namely substrate material, and the substrate temperature (350-1100°C). Quartz or Si substrates and substrate temperature of 800°C were found to be optimal for achievement of the highest yield of Si-V centre photoluminescence. For all the diamond samples, the temperature dependent PL spectra exhibited the blue shift in zero-phonon line (ZPL) position with decreasing temperature. This effect is discussed from the point of view of temperature behaviour of Si-V electronic transition energy. For selected samples, ZPL narrowing were analyzed as well. Temperature development of PL integral intensity driven by Boltzmann activated process indicates the contribution of other centres in luminescence mechanism. Finally, comparison and outlooks of PL properties of diamond and ZnO thin films will be presented. This work was supported by the CSF project 16-10429J.

Název v anglickém jazyce

Photoluminescence in wide band gap nanocrystals

Popis výsledku anglicky

In this work, we present photoluminescence (PL) properties of Si-V colour centres in diamond and zinc oxide, which are perspective for life science and photonic applications. The nanocrystalline diamond films were grown by microwave plasma enhanced CVD system, while ZnO nanocrystals were grown by magnetron sputtering. Temperature dependent steady-state PL of Si-V centres was studied within the range 11-300 K. PL properties are correlated with deposition process conditions, namely substrate material, and the substrate temperature (350-1100°C). Quartz or Si substrates and substrate temperature of 800°C were found to be optimal for achievement of the highest yield of Si-V centre photoluminescence. For all the diamond samples, the temperature dependent PL spectra exhibited the blue shift in zero-phonon line (ZPL) position with decreasing temperature. This effect is discussed from the point of view of temperature behaviour of Si-V electronic transition energy. For selected samples, ZPL narrowing were analyzed as well. Temperature development of PL integral intensity driven by Boltzmann activated process indicates the contribution of other centres in luminescence mechanism. Finally, comparison and outlooks of PL properties of diamond and ZnO thin films will be presented. This work was supported by the CSF project 16-10429J.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů