Investigation of Boron containing AlN and AlGaN layers grown by MOVPE

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00495805" target="_blank" >RIV/68378271:_____/18:00495805 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssb.201700510" target="_blank" >http://dx.doi.org/10.1002/pssb.201700510</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201700510" target="_blank" >10.1002/pssb.201700510</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of Boron containing AlN and AlGaN layers grown by MOVPE

Popis výsledku v původním jazyce

We investigate epitaxial growth of boron containing (Al,Ga)N layers for applications in UV-LEDs. For AlBN layers containing 5% of boron, columnar growth was observed. TEM studies revealed B-lean, crystalline columns, separated by highly boron containing amorphous intermediate regions. However, in first few nanometers of AlBN growth, there is no columnar growth. Indeed, first layers of AlBGaN/AlN superlattice stacks do not show any sign of columnar growth. For increasing thickness, 3D-like growth develops through formation of pyramidal structures. TEM-based SAED analysis proves that the observed inclined facets are not a result of lattice twinning. Thin AlBGaN layers with different thickness containing 1% boron show similar PL spectra with slightly reduced intensity compared to similar B-free AlGaN layers. Although small grainy structures develop and increase in density for AlBGaN layers with a thickness of 10 nm and more, the PL intensity increases steadily with layer thickness.

Název v anglickém jazyce

Investigation of Boron containing AlN and AlGaN layers grown by MOVPE

Popis výsledku anglicky

We investigate epitaxial growth of boron containing (Al,Ga)N layers for applications in UV-LEDs. For AlBN layers containing 5% of boron, columnar growth was observed. TEM studies revealed B-lean, crystalline columns, separated by highly boron containing amorphous intermediate regions. However, in first few nanometers of AlBN growth, there is no columnar growth. Indeed, first layers of AlBGaN/AlN superlattice stacks do not show any sign of columnar growth. For increasing thickness, 3D-like growth develops through formation of pyramidal structures. TEM-based SAED analysis proves that the observed inclined facets are not a result of lattice twinning. Thin AlBGaN layers with different thickness containing 1% boron show similar PL spectra with slightly reduced intensity compared to similar B-free AlGaN layers. Although small grainy structures develop and increase in density for AlBGaN layers with a thickness of 10 nm and more, the PL intensity increases steadily with layer thickness.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Svazek periodika

255

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

000432028400032

EID výsledku v databázi Scopus

2-s2.0-85044235353