Effect of dust contamination on GaN/InGaN multiple quantum well growth morphology

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496161" target="_blank" >RIV/68378271:_____/18:00496161 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Effect of dust contamination on GaN/InGaN multiple quantum well growth morphology

Popis výsledku v původním jazyce

We report about macroscopic defects from InGaN/GaN multiple quantum well structures caused by unintended contamination of dust particles during the metalorganic vapour phase epitaxy. These structures are developed for use as fast scintillators and detectors of ionizing radiation, where extremely low intensity of excitation should be expected, and thus high demands on cleanliness must be required. On some of our samples, we found defects hundreds of μm in size with different types of changes in their epitaxial morphology and with different modifications in their physical properties. Using EDX in an electron microscope, particles of different elemental composition (e.g. Fe, Cr, Ni, Ca, Si) have been identified in the centre of the defects. We will present cathodoluminescence, PL and Raman spectra in surroundings of different defects and discuss the influence of the contamination.n

Název v anglickém jazyce

Effect of dust contamination on GaN/InGaN multiple quantum well growth morphology

Popis výsledku anglicky

We report about macroscopic defects from InGaN/GaN multiple quantum well structures caused by unintended contamination of dust particles during the metalorganic vapour phase epitaxy. These structures are developed for use as fast scintillators and detectors of ionizing radiation, where extremely low intensity of excitation should be expected, and thus high demands on cleanliness must be required. On some of our samples, we found defects hundreds of μm in size with different types of changes in their epitaxial morphology and with different modifications in their physical properties. Using EDX in an electron microscope, particles of different elemental composition (e.g. Fe, Cr, Ni, Ca, Si) have been identified in the centre of the defects. We will present cathodoluminescence, PL and Raman spectra in surroundings of different defects and discuss the influence of the contamination.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů