Impact of macroscopic particle composition on GaN epitaxial growth morphology and luminescence

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00537993" target="_blank" >RIV/68378271:_____/20:00537993 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Impact of macroscopic particle composition on GaN epitaxial growth morphology and luminescence

Popis výsledku v původním jazyce

We describe macroscopic defects on InGaN/GaN multiple quantum well structures caused by accidental contamination with dust particles during the metalorganic vapour phase epitaxy. Gallium nitride and InGaN/GaN heterostructures are promising materials for many optoelectronic devices. During the preparation of these structures, great attention is paid to optimization of the growth parameters and to reduce the density of dislocations and point defects in this material. However, only a small number of studies were performed on macroscopic defects. Understanding the impact of each of the contaminating elements is not only important for sample diagnostics, but it also provides insight into the complex physical and chemical processes during epitaxy.We focus on the influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures and present a Raman spectroscopy study of macroscopic defect containing regions of the samples.

Název v anglickém jazyce

Impact of macroscopic particle composition on GaN epitaxial growth morphology and luminescence

Popis výsledku anglicky

We describe macroscopic defects on InGaN/GaN multiple quantum well structures caused by accidental contamination with dust particles during the metalorganic vapour phase epitaxy. Gallium nitride and InGaN/GaN heterostructures are promising materials for many optoelectronic devices. During the preparation of these structures, great attention is paid to optimization of the growth parameters and to reduce the density of dislocations and point defects in this material. However, only a small number of studies were performed on macroscopic defects. Understanding the impact of each of the contaminating elements is not only important for sample diagnostics, but it also provides insight into the complex physical and chemical processes during epitaxy.We focus on the influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures and present a Raman spectroscopy study of macroscopic defect containing regions of the samples.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

20th Conference of Czech and Slovak Physicists Proceedings

ISBN

978-80-89855-13-1

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

89-90

Název nakladatele

Slovak Physical Society, Czech Physical Society

Místo vydání

Košice

Místo konání akce

Prague

Datum konání akce

7. 9. 2020

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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