Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures

Popis výsledku v původním jazyce

GaN and InGaN/GaN heterostructures are promising materials for many optoelectronic devices, such as light emitters, high-power and high-frequency electronics, detectors of ionizing radiation, scintillators. Great attention has been paid to optimize growth parameters and decrease density of dislocations and defects in this material. A little outside attention remains study of macroscopic defects. We focus on the influence of macroscopic defects on photoluminescence (PL) of GaN/InGaN multiple quantum well (MQW) structures and present a Raman spectroscopy study of these regions. Some GaN and InGaN/GaN samples exhibit large dark areas with PL decreasing by several orders of magnitude, in the centre of which is a structural defect. Traces of iron, stainless steel or oxides of iron were detected in majority of studied large dark areas by SEM microscopy with EDX and Raman spectroscopy.n

Název v anglickém jazyce

Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures

Popis výsledku anglicky

GaN and InGaN/GaN heterostructures are promising materials for many optoelectronic devices, such as light emitters, high-power and high-frequency electronics, detectors of ionizing radiation, scintillators. Great attention has been paid to optimize growth parameters and decrease density of dislocations and defects in this material. A little outside attention remains study of macroscopic defects. We focus on the influence of macroscopic defects on photoluminescence (PL) of GaN/InGaN multiple quantum well (MQW) structures and present a Raman spectroscopy study of these regions. Some GaN and InGaN/GaN samples exhibit large dark areas with PL decreasing by several orders of magnitude, in the centre of which is a structural defect. Traces of iron, stainless steel or oxides of iron were detected in majority of studied large dark areas by SEM microscopy with EDX and Raman spectroscopy.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů