Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00500481" target="_blank" >RIV/68378271:_____/18:00500481 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.pcrysgrow.2018.07.002" target="_blank" >https://doi.org/10.1016/j.pcrysgrow.2018.07.002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.pcrysgrow.2018.07.002" target="_blank" >10.1016/j.pcrysgrow.2018.07.002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory

Popis výsledku v původním jazyce

The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of insitu,insystem and exsitu characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.

Název v anglickém jazyce

Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory

Popis výsledku anglicky

The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of insitu,insystem and exsitu characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC18-06970J" target="_blank" >GC18-06970J: Formování heterovalentních rozhraní: kombinované studium GaP/Si heterostruktur metodou fotoemise a ab initio DFT výpočtů.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Progress in Crystal Growth and Characterization of Materials

ISSN

0960-8974

e-ISSN

1878-4208

Svazek periodika

64

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

30

Strana od-do

103-132

Kód UT WoS článku

000454966600001

EID výsledku v databázi Scopus

2-s2.0-85056423469