Improved contactless method of IR reflectance under grazing incidence for measurement of doping profiles

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00501967" target="_blank" >RIV/68378271:_____/18:00501967 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/18:00327155

Výsledek na webu

<a href="http://dx.doi.org/10.4229/35thEUPVSEC20182018-2AO.5.3" target="_blank" >http://dx.doi.org/10.4229/35thEUPVSEC20182018-2AO.5.3</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4229/35thEUPVSEC20182018-2AO.5.3" target="_blank" >10.4229/35thEUPVSEC20182018-2AO.5.3</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Improved contactless method of IR reflectance under grazing incidence for measurement of doping profiles

Popis výsledku v původním jazyce

We have elaborated contactless method of measurement and evaluation of doping profiles in silicon polished wafers based on infrared reflectance under high angle of incidence. We have found higher angle of incidence increases sensitivity, however approaching Brewster angle increases also experimental error, therefore 65 angle has been chosen. Moreover, to increase reproducibility we divide the measured spectra by reference spectra taken on an undoped sample, and further we rescale the spectra to fixed value in the region of 4000 cm-1–7000 cm-1. To reduce number of evaluated parameter, the carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumption that the first part of the profile is a constant plateau and that the following two exponential tails are joined at a value of 3x10^19 cm-3.n

Název v anglickém jazyce

Improved contactless method of IR reflectance under grazing incidence for measurement of doping profiles

Popis výsledku anglicky

We have elaborated contactless method of measurement and evaluation of doping profiles in silicon polished wafers based on infrared reflectance under high angle of incidence. We have found higher angle of incidence increases sensitivity, however approaching Brewster angle increases also experimental error, therefore 65 angle has been chosen. Moreover, to increase reproducibility we divide the measured spectra by reference spectra taken on an undoped sample, and further we rescale the spectra to fixed value in the region of 4000 cm-1–7000 cm-1. To reduce number of evaluated parameter, the carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumption that the first part of the profile is a constant plateau and that the following two exponential tails are joined at a value of 3x10^19 cm-3.n

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of 35th European Photovoltaic Solar Energy Conference and Exhibition

ISBN

3-936338-50-7

ISSN

—

e-ISSN

—

Počet stran výsledku

3

Strana od-do

278-280

Název nakladatele

WIP

Místo vydání

Brusel

Místo konání akce

Brusel

Datum konání akce

24. 9. 2018

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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