Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00492864" target="_blank" >RIV/68378271:_____/18:00492864 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/18:00322509 RIV/00216224:14310/18:00106359

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.5015988" target="_blank" >http://dx.doi.org/10.1063/1.5015988</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5015988" target="_blank" >10.1063/1.5015988</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence

Popis výsledku v původním jazyce

The grazing angle infrared reflectance method of the measurement and evaluation of charge carrier profiles in polished wafers was developed. Experimental errors were minimized by division by reference spectra taken on an undoped sample and further by normalization to a fixed value in the region of 4000/cm to 7000/cm. The carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumptions. As a physical model, the Drude equation is used with two parameters assumed to be concentration-dependent: relaxation time and contribution from band-to-band excitations. The model parameters were calibrated independently by infrared ellipsometry. The presented method gives results in satisfactory agreement with the profiles measured by the electrochemical capacitance-voltage method.

Název v anglickém jazyce

Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence

Popis výsledku anglicky

The grazing angle infrared reflectance method of the measurement and evaluation of charge carrier profiles in polished wafers was developed. Experimental errors were minimized by division by reference spectra taken on an undoped sample and further by normalization to a fixed value in the region of 4000/cm to 7000/cm. The carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumptions. As a physical model, the Drude equation is used with two parameters assumed to be concentration-dependent: relaxation time and contribution from band-to-band excitations. The model parameters were calibrated independently by infrared ellipsometry. The presented method gives results in satisfactory agreement with the profiles measured by the electrochemical capacitance-voltage method.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Review of Scientific Instruments

ISSN

0034-6748

e-ISSN

—

Svazek periodika

89

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

000437195200014

EID výsledku v databázi Scopus

2-s2.0-85048681137