Kelvin probe force microscopy and calculation of charge transport in a graphene/silicon dioxide system at different relative humidity

Kód výsledku v IS VaVaI

RIV/68378271:_____/18:00511229 - isvavai.cz

Nalezeny alternativní kódy

RIV/00216305:26620/18:PU127833 RIV/70883521:28110/18:63520423

Výsledek na webu

https://doi.org/10.1021/acsami.7b18041

DOI - Digital Object Identifier

10.1021/acsami.7b18041

Jazyk výsledku

angličtina

Název v původním jazyce

Kelvin probe force microscopy and calculation of charge transport in a graphene/silicon dioxide system at different relative humidity

Popis výsledku v původním jazyce

The article shows how the dynamic mapping ofsurface potential (SP) measured by Kelvin probe forcemicroscopy (KPFM) in combination with calculation by adiffusion-like equation and the theory based on the Brunauer−Emmett−Teller (BET) model of water condensation andelectron hopping can provide the information concerning theresistivity of low conductive surfaces and their water coverage.This is enabled by a study of charge transport between isolatedand grounded graphene sheets on a silicon dioxide surface atdifferent relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In theexperimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy(AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM.

Název v anglickém jazyce

Kelvin probe force microscopy and calculation of charge transport in a graphene/silicon dioxide system at different relative humidity

Popis výsledku anglicky

The article shows how the dynamic mapping ofsurface potential (SP) measured by Kelvin probe forcemicroscopy (KPFM) in combination with calculation by adiffusion-like equation and the theory based on the Brunauer−Emmett−Teller (BET) model of water condensation andelectron hopping can provide the information concerning theresistivity of low conductive surfaces and their water coverage.This is enabled by a study of charge transport between isolatedand grounded graphene sheets on a silicon dioxide surface atdifferent relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In theexperimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy(AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

14

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

11987-11994

Kód UT WoS článku

000430156000068

EID výsledku v databázi Scopus

2-s2.0-85045341032