Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00504730" target="_blank" >RIV/68378271:_____/19:00504730 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0296313" target="_blank" >http://hdl.handle.net/11104/0296313</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41598-018-38472-9" target="_blank" >10.1038/s41598-018-38472-9</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond

Popis výsledku v původním jazyce

Here, we report on the fabrication of few-layer molybdenum disulfide films on the top of thin diamond substrates using a simplified sulfurization of a pre-deposited molybdenum coating. The as-prepared layers were characterized by a number of techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We observed that the sulfurization process had no impact on the diamond substrates and, in particular, none molybdenum carbide layer was formed at the interface between the Mo film and diamond substrate. We found out that the initial thickness of the Mo film determined the crystallographic orientation of the c-axis of the as-grown MoS2 layer. This enables a controlled growth of the MoS2 layers with a tailored crystallographic orientation for particular applications, such as solar cells, water splitting or water disinfection.

Název v anglickém jazyce

Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond

Popis výsledku anglicky

Here, we report on the fabrication of few-layer molybdenum disulfide films on the top of thin diamond substrates using a simplified sulfurization of a pre-deposited molybdenum coating. The as-prepared layers were characterized by a number of techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We observed that the sulfurization process had no impact on the diamond substrates and, in particular, none molybdenum carbide layer was formed at the interface between the Mo film and diamond substrate. We found out that the initial thickness of the Mo film determined the crystallographic orientation of the c-axis of the as-grown MoS2 layer. This enables a controlled growth of the MoS2 layers with a tailored crystallographic orientation for particular applications, such as solar cells, water splitting or water disinfection.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scientific Reports

ISSN

2045-2322

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

Feb

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

1-11

Kód UT WoS článku

000458619600001

EID výsledku v databázi Scopus

2-s2.0-85061598042