Defects creation in the undoped Gd3(Ga,Al)5O12 single crystals and Ce3+ doped Gd3(Ga,Al)5O12 single crystals and epitaxial films under irradiation in the Gd3+ related absorption bands

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00520187" target="_blank" >RIV/68378271:_____/19:00520187 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/19:10399562

Výsledek na webu

<a href="https://doi.org/10.1016/j.optmat.2018.12.033" target="_blank" >https://doi.org/10.1016/j.optmat.2018.12.033</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2018.12.033" target="_blank" >10.1016/j.optmat.2018.12.033</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Defects creation in the undoped Gd3(Ga,Al)5O12 single crystals and Ce3+ doped Gd3(Ga,Al)5O12 single crystals and epitaxial films under irradiation in the Gd3+ related absorption bands

Popis výsledku v původním jazyce

For the first time, an effective photostimulated creation of defects is observed under selective irradiation of the undoped Gd3Ga3Al2O12 single crystal and the Ce - doped Gd3(Ga,Al)5O12 single crystal and epitaxial film in the Gd3+ - related 8 S7/2 → 6 IJ and 8 S7/2 → 6 PJ absorption bands. Defects creation processes are investigated by the thermally stimulated luminescence (TSL) method in the 4.2–500 K temperature range. The dependences of the TSL glow curve peak intensity on the irradiation photon energy, irradiation temperature, and irradiation duration are measured and analyzed. The activation energy of the TSL glow curve peaks creation is found to be about 0.02 eV. Possible mechanisms of defects creation under irradiation in the absorption bands of Gd3+ in Gd3Ga3Al2O12 and Gd3(Ga,Al)5O12:Ce are discussed.

Název v anglickém jazyce

Defects creation in the undoped Gd3(Ga,Al)5O12 single crystals and Ce3+ doped Gd3(Ga,Al)5O12 single crystals and epitaxial films under irradiation in the Gd3+ related absorption bands

Popis výsledku anglicky

For the first time, an effective photostimulated creation of defects is observed under selective irradiation of the undoped Gd3Ga3Al2O12 single crystal and the Ce - doped Gd3(Ga,Al)5O12 single crystal and epitaxial film in the Gd3+ - related 8 S7/2 → 6 IJ and 8 S7/2 → 6 PJ absorption bands. Defects creation processes are investigated by the thermally stimulated luminescence (TSL) method in the 4.2–500 K temperature range. The dependences of the TSL glow curve peak intensity on the irradiation photon energy, irradiation temperature, and irradiation duration are measured and analyzed. The activation energy of the TSL glow curve peaks creation is found to be about 0.02 eV. Possible mechanisms of defects creation under irradiation in the absorption bands of Gd3+ in Gd3Ga3Al2O12 and Gd3(Ga,Al)5O12:Ce are discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA16-15569S" target="_blank" >GA16-15569S: Rychlé tenkovrstvé scintilátory pro 2D-zobrazování s vysokým rozlišením</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials

ISSN

0925-3467

e-ISSN

—

Svazek periodika

88

Číslo periodika v rámci svazku

Feb

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

601-605

Kód UT WoS článku

000461001600084

EID výsledku v databázi Scopus

2-s2.0-85059158268