Deep levels, charge transport and mixed conductivity in organometallic halide perovskites

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521386" target="_blank" >RIV/68378271:_____/19:00521386 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/19:00331041 RIV/00216208:11320/19:10394674

Výsledek na webu

<a href="https://doi.org/10.1039/c9ee00311h" target="_blank" >https://doi.org/10.1039/c9ee00311h</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c9ee00311h" target="_blank" >10.1039/c9ee00311h</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Deep levels, charge transport and mixed conductivity in organometallic halide perovskites

Popis výsledku v původním jazyce

Organometallic halide perovskites (OMHPs) have undergone a remarkable development as highly efficient optoelectronic materials for a variety of applications. To fully use the potential of OMHPs, several challenges must be overcome. One of these challenges is the understanding and control of their defect structures. The available data from research studies suggest that trap-assisted recombination exists in OMHPs despite their large carrier lifetimes and this has resulted in the perovskite boom over the last decade. Conventional spectroscopy faces serious obstacles in OMHPs due to their low defect concentrations and capture cross section. By using photo-Hall effect spectroscopy, we visualized the deep level defects responsible for non-radiative recombination and established their parameters in the MAPbBr3. The presented model in combination with Time of Flight measurements demonstrated that the electron transport is mostly affected by the trap-assisted recombination

Název v anglickém jazyce

Deep levels, charge transport and mixed conductivity in organometallic halide perovskites

Popis výsledku anglicky

Organometallic halide perovskites (OMHPs) have undergone a remarkable development as highly efficient optoelectronic materials for a variety of applications. To fully use the potential of OMHPs, several challenges must be overcome. One of these challenges is the understanding and control of their defect structures. The available data from research studies suggest that trap-assisted recombination exists in OMHPs despite their large carrier lifetimes and this has resulted in the perovskite boom over the last decade. Conventional spectroscopy faces serious obstacles in OMHPs due to their low defect concentrations and capture cross section. By using photo-Hall effect spectroscopy, we visualized the deep level defects responsible for non-radiative recombination and established their parameters in the MAPbBr3. The presented model in combination with Time of Flight measurements demonstrated that the electron transport is mostly affected by the trap-assisted recombination

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GJ17-26041Y" target="_blank" >GJ17-26041Y: Změny opto-elektronických vlastností organicko-anorganických halogenidových perovskitů při osvětlení</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Energy & Environmental Science

ISSN

1754-5692

e-ISSN

—

Svazek periodika

12

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

13

Strana od-do

1413-1425

Kód UT WoS článku

000465275800021

EID výsledku v databázi Scopus

2-s2.0-85064253781