Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536704" target="_blank" >RIV/68378271:_____/20:00536704 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/20:00342288

Výsledek na webu

<a href="https://doi.org/10.1109/JPHOTOV.2020.2998900" target="_blank" >https://doi.org/10.1109/JPHOTOV.2020.2998900</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/JPHOTOV.2020.2998900" target="_blank" >10.1109/JPHOTOV.2020.2998900</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon

Popis výsledku v původním jazyce

High efficiency silicon solar cells generally feature carrier-selective contacts, for which there is interest in using a wide range of materials. The electrical and optical requirements that these layers must fulfill have been investigated previously for standard test conditions. Here, we investigate how the required work functions and layer thickness differ under other illumination conditions. The differences will be important for the optimization of tandem device subcells, and for devices which are intended for use in low-light conditions or under low-level concentration. Heterojunction cells are fabricated and the effect of reduced contact thickness and doping at different illumination levels is experimentally demonstrated. Simulations of a-Si/c-Si heterojunctions and ideal metal-semiconductor junctions reveal a logarithmic variation with illumination level of 0.1–10 suns in the electrode work function, and the heterojunction contact layer work function and thickness required.

Název v anglickém jazyce

Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon

Popis výsledku anglicky

High efficiency silicon solar cells generally feature carrier-selective contacts, for which there is interest in using a wide range of materials. The electrical and optical requirements that these layers must fulfill have been investigated previously for standard test conditions. Here, we investigate how the required work functions and layer thickness differ under other illumination conditions. The differences will be important for the optimization of tandem device subcells, and for devices which are intended for use in low-light conditions or under low-level concentration. Heterojunction cells are fabricated and the effect of reduced contact thickness and doping at different illumination levels is experimentally demonstrated. Simulations of a-Si/c-Si heterojunctions and ideal metal-semiconductor junctions reveal a logarithmic variation with illumination level of 0.1–10 suns in the electrode work function, and the heterojunction contact layer work function and thickness required.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Journal of Photovoltaics

ISSN

2156-3381

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

1214-1225

Kód UT WoS článku

000562057700002

EID výsledku v databázi Scopus

2-s2.0-85090159305