New metric for carrier selective contacts for silicon heterojunction solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00359370" target="_blank" >RIV/68407700:21230/22:00359370 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.solener.2022.08.047" target="_blank" >https://doi.org/10.1016/j.solener.2022.08.047</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.solener.2022.08.047" target="_blank" >10.1016/j.solener.2022.08.047</a>

Jazyk výsledku

angličtina

Název v původním jazyce

New metric for carrier selective contacts for silicon heterojunction solar cells

Popis výsledku v původním jazyce

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest reported voltage among crystalline silicon technologies. The electrode work-function, doping and thickness of the doped layer remain the key parameters for governing the cell performance. Recently, we have studied the requirements for carrier selective contacts under various illumination levels and reported logarithmic dependence of these parameters. In this work, we define a new metric for describing the ability of a contact to collect the carriers and named it as contact strength. We have developed an analytical approach for contact strength of hole selective contacts which represents the requirements on doping, thickness of the contact layer, and electrode work-function for a given illumination. First, the numerical model is calibrated with the experimental data for a wide range of illumination (0.01 Sun – 1.0 Sun) and then simulations have been fitted with analytical model. For the selective contact layer, we observe that only the total charge, rather than thickness and doping individually, matters. The work-function of the top electrode also contributes strongly to contact strength and can in principle substitute doped layer. This insightful metric will guide the solar cell technologists to better understand the carrier selective contacts and to maximize the cell performance not only at standard test conditions (STC), but also at low light illuminations.

Název v anglickém jazyce

New metric for carrier selective contacts for silicon heterojunction solar cells

Popis výsledku anglicky

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest reported voltage among crystalline silicon technologies. The electrode work-function, doping and thickness of the doped layer remain the key parameters for governing the cell performance. Recently, we have studied the requirements for carrier selective contacts under various illumination levels and reported logarithmic dependence of these parameters. In this work, we define a new metric for describing the ability of a contact to collect the carriers and named it as contact strength. We have developed an analytical approach for contact strength of hole selective contacts which represents the requirements on doping, thickness of the contact layer, and electrode work-function for a given illumination. First, the numerical model is calibrated with the experimental data for a wide range of illumination (0.01 Sun – 1.0 Sun) and then simulations have been fitted with analytical model. For the selective contact layer, we observe that only the total charge, rather than thickness and doping individually, matters. The work-function of the top electrode also contributes strongly to contact strength and can in principle substitute doped layer. This insightful metric will guide the solar cell technologists to better understand the carrier selective contacts and to maximize the cell performance not only at standard test conditions (STC), but also at low light illuminations.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centrum pokročilé fotovoltaiky</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solar Energy

ISSN

0038-092X

e-ISSN

1471-1257

Svazek periodika

144

Číslo periodika v rámci svazku

September

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

168-174

Kód UT WoS článku

000862848200005

EID výsledku v databázi Scopus

2-s2.0-85136564887