Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471531" target="_blank" >RIV/68378271:_____/16:00471531 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/JPHOTOV.2016.2571619" target="_blank" >http://dx.doi.org/10.1109/JPHOTOV.2016.2571619</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/JPHOTOV.2016.2571619" target="_blank" >10.1109/JPHOTOV.2016.2571619</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Popis výsledku v původním jazyce

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications.

Název v anglickém jazyce

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Popis výsledku anglicky

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/LM2015087" target="_blank" >LM2015087: Laboratoř nanostruktur a nanomateriálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Journal of Photovoltaics

ISSN

2156-3381

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

1132-1140

Kód UT WoS článku

000388963600011

EID výsledku v databázi Scopus

2-s2.0-84975298269