Flexoelectricity in polycrystalline TiO2 thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536708" target="_blank" >RIV/68378271:_____/20:00536708 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0314434" target="_blank" >http://hdl.handle.net/11104/0314434</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.actamat.2020.03.018" target="_blank" >10.1016/j.actamat.2020.03.018</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Flexoelectricity in polycrystalline TiO2 thin films

Popis výsledku v původním jazyce

he flexoelectric effect describes the electromechanical coupling of a strain gradient to a polarization and vice versa. The flexoelectric effect has not been established in today`s M/NEMS device architectures as other transducer principles. In this work, values of the converse flexoelectric coefficient for titanium dioxide (TiO2) are provided. The experimental results are based on characterization of IrO2/TiO2/IrO2 cantilevers. TiO2 is selected as functional thin film material as it offers a very high permittivity and shows no hysteresis or saturation effects as it is neither ferro- nor paraelectric. TiO2 guarantees a low cost, lead-free realization and can be directly integrated in a standard silicon MEMS fabrication process by sputter deposition. The flexoelectric coefficient is shown to be µeff = 1.78 ± 0.16 nC m−1 at 10 kHz. The flexoelectric coupling constant with a value of 2.75 V is in good agreement with that theoretically predicted by Kogan`s estimate of 3.14 V.

Název v anglickém jazyce

Flexoelectricity in polycrystalline TiO2 thin films

Popis výsledku anglicky

he flexoelectric effect describes the electromechanical coupling of a strain gradient to a polarization and vice versa. The flexoelectric effect has not been established in today`s M/NEMS device architectures as other transducer principles. In this work, values of the converse flexoelectric coefficient for titanium dioxide (TiO2) are provided. The experimental results are based on characterization of IrO2/TiO2/IrO2 cantilevers. TiO2 is selected as functional thin film material as it offers a very high permittivity and shows no hysteresis or saturation effects as it is neither ferro- nor paraelectric. TiO2 guarantees a low cost, lead-free realization and can be directly integrated in a standard silicon MEMS fabrication process by sputter deposition. The flexoelectric coefficient is shown to be µeff = 1.78 ± 0.16 nC m−1 at 10 kHz. The flexoelectric coupling constant with a value of 2.75 V is in good agreement with that theoretically predicted by Kogan`s estimate of 3.14 V.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Materialia

ISSN

1359-6454

e-ISSN

—

Svazek periodika

190

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

124-129

Kód UT WoS článku

000527831400012

EID výsledku v databázi Scopus

2-s2.0-85083311903