Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO2/TiO2/IrO2 capacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00561797" target="_blank" >RIV/68378271:_____/22:00561797 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0334300" target="_blank" >https://hdl.handle.net/11104/0334300</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0080139" target="_blank" >10.1063/5.0080139</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO2/TiO2/IrO2 capacitors

Popis výsledku v původním jazyce

Titanium dioxide (TiO2) is a high-performance material for emerging device applications, such as in resistive switching memories, in high-k capacitors, or, due to its flexoelectricity, in micro/nano-electro-mechanical systems. Enhanced electrical properties of TiO2 are ensured, especially by a careful selection of the bottom electrode material. Iridium dioxide (IrO2) is an excellent choice, as it favors the high-k rutile phase growth of TiO2. In this study, we introduce the fabrication of IrO2/TiO2/IrO2 capacitors and thoroughly characterize their electrical behavior. These capacitors show a dielectric constant for low temperature sputtered TiO2 of ∼70. From leakage current measurements, a coupled capacitive–memristive behavior is determined, which is assumed due to the presence of a reduced TiO2−x layer at the IrO2/TiO2 interface observed from transmission electron microscopy analyses.n

Název v anglickém jazyce

Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO2/TiO2/IrO2 capacitors

Popis výsledku anglicky

Titanium dioxide (TiO2) is a high-performance material for emerging device applications, such as in resistive switching memories, in high-k capacitors, or, due to its flexoelectricity, in micro/nano-electro-mechanical systems. Enhanced electrical properties of TiO2 are ensured, especially by a careful selection of the bottom electrode material. Iridium dioxide (IrO2) is an excellent choice, as it favors the high-k rutile phase growth of TiO2. In this study, we introduce the fabrication of IrO2/TiO2/IrO2 capacitors and thoroughly characterize their electrical behavior. These capacitors show a dielectric constant for low temperature sputtered TiO2 of ∼70. From leakage current measurements, a coupled capacitive–memristive behavior is determined, which is assumed due to the presence of a reduced TiO2−x layer at the IrO2/TiO2 interface observed from transmission electron microscopy analyses.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

131

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

095301

Kód UT WoS článku

000772778300011

EID výsledku v databázi Scopus

2-s2.0-85126355780