Nucleation and growth of metal-catalyzed silicon nanowires under plasma

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00539179" target="_blank" >RIV/68378271:_____/20:00539179 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26620/20:PU140207

Výsledek na webu

<a href="https://doi.org/10.1088/1361-6528/ab76ef" target="_blank" >https://doi.org/10.1088/1361-6528/ab76ef</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6528/ab76ef" target="_blank" >10.1088/1361-6528/ab76ef</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nucleation and growth of metal-catalyzed silicon nanowires under plasma

Popis výsledku v původním jazyce

We report the results of a microscopic study of the nucleation and early growth stages of metal-catalyzed silicon nanowires in plasma-enhanced chemical vapor deposition. The nucleation ofsilicon nanowires is investigated as a function of different deposition conditions and metalcatalysts(Sn, In and Au)using correlation of atomic force microscopy and scanning electronmicroscopy. This correlation method enabled us to visualize individual catalytic nanoparticlesbefore and after the nanowire growth and identify the key parameters influencing the nanowirenucleation under plasma. The size and position of catalytic nanoparticles are found to play asignificant role in the nucleation. We demonstrate that only small isolated nanoparticles in therange of 10–20 nm contribute to the nanowire growth under plasma, while larger nanoparticlesare inactive because they get buried under a layer of a-Si:H before reaching supersaturation.Systematic analysis of different growth parameters reveals that the nanowire growth in plasmacontradicts the vapor–liquid–solid mechanism at thermal equilibrium in many ways. Thenanowire growth is much faster and proceeds even at negligible silicon solubility and bellow theeutectic temperature of the metal-silicon alloy. Based on the observations, we propose thenanowire growth under plasma to be characterized by the rapid solidification mechanism, wherea crystalline silicon phase emerges from a metastable supersaturated liquid metal-silicon phase inlocal nonequilibrium.n

Název v anglickém jazyce

Nucleation and growth of metal-catalyzed silicon nanowires under plasma

Popis výsledku anglicky

We report the results of a microscopic study of the nucleation and early growth stages of metal-catalyzed silicon nanowires in plasma-enhanced chemical vapor deposition. The nucleation ofsilicon nanowires is investigated as a function of different deposition conditions and metalcatalysts(Sn, In and Au)using correlation of atomic force microscopy and scanning electronmicroscopy. This correlation method enabled us to visualize individual catalytic nanoparticlesbefore and after the nanowire growth and identify the key parameters influencing the nanowirenucleation under plasma. The size and position of catalytic nanoparticles are found to play asignificant role in the nucleation. We demonstrate that only small isolated nanoparticles in therange of 10–20 nm contribute to the nanowire growth under plasma, while larger nanoparticlesare inactive because they get buried under a layer of a-Si:H before reaching supersaturation.Systematic analysis of different growth parameters reveals that the nanowire growth in plasmacontradicts the vapor–liquid–solid mechanism at thermal equilibrium in many ways. Thenanowire growth is much faster and proceeds even at negligible silicon solubility and bellow theeutectic temperature of the metal-silicon alloy. Based on the observations, we propose thenanowire growth under plasma to be characterized by the rapid solidification mechanism, wherea crystalline silicon phase emerges from a metastable supersaturated liquid metal-silicon phase inlocal nonequilibrium.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanotechnology

ISSN

0957-4484

e-ISSN

—

Svazek periodika

31

Číslo periodika v rámci svazku

22

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

1-11

Kód UT WoS článku

000521482000001

EID výsledku v databázi Scopus

2-s2.0-85082094165