Large damping-like spin-orbit torque in a 2D conductive 1T-TaS2 monolayer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00539193" target="_blank" >RIV/68378271:_____/20:00539193 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0317378" target="_blank" >http://hdl.handle.net/11104/0317378</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.nanolett.0c01955" target="_blank" >10.1021/acs.nanolett.0c01955</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Large damping-like spin-orbit torque in a 2D conductive 1T-TaS2 monolayer

Popis výsledku v původním jazyce

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9 10 × Ω 5 2ℏe − − 1 1 m ) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin−orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices

Název v anglickém jazyce

Large damping-like spin-orbit torque in a 2D conductive 1T-TaS2 monolayer

Popis výsledku anglicky

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9 10 × Ω 5 2ℏe − − 1 1 m ) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin−orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nano Letters

ISSN

1530-6984

e-ISSN

—

Svazek periodika

20

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

6372-6380

Kód UT WoS článku

000571442000019

EID výsledku v databázi Scopus

2-s2.0-85090613723