New types of composite scintillators based on the single crystalline films and crystals of Gd3(Al,Ga)5O12:Ce mixed garnets

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00541718" target="_blank" >RIV/68378271:_____/21:00541718 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.mseb.2020.114909" target="_blank" >https://doi.org/10.1016/j.mseb.2020.114909</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mseb.2020.114909" target="_blank" >10.1016/j.mseb.2020.114909</a>

Jazyk výsledku

angličtina

Název v původním jazyce

New types of composite scintillators based on the single crystalline films and crystals of Gd3(Al,Ga)5O12:Ce mixed garnets

Popis výsledku v původním jazyce

This work presents the results of creation of novel composite scintillators based on the Gd3Al5-x GaxO12:Ce (x = 1.16–2.67) single crystalline films (SCF), grown by the LPE method onto Gd3Al2.5 Ga2.5O12:Ce single crystal (SC) substrates. The scintillation properties of film/crystal epitaxial structures were investigated under α–particle and γ–quantum excitations. Under α–particle excitation, the light yield of mentioned SCF scintillators is significantly less than that in their substrates due to the influence of Pb2+ flux contamination and formation of Pb2+-Ce4+ centers. Meanwhile, these SCF scintillators under α–excitation possess significantly faster decay kinetics than that of their substrates under γ–excitation. Therefore, the Gd3Al5-xGaxO12:Ce SCFs (x = 1.16–2.67) /Gd3Al2.5Ga2.5O12:Ce SC epitaxial structures can be used as composite scintillators for simultaneous registration of the components of mixed ionizing fluxes.

Název v anglickém jazyce

New types of composite scintillators based on the single crystalline films and crystals of Gd3(Al,Ga)5O12:Ce mixed garnets

Popis výsledku anglicky

This work presents the results of creation of novel composite scintillators based on the Gd3Al5-x GaxO12:Ce (x = 1.16–2.67) single crystalline films (SCF), grown by the LPE method onto Gd3Al2.5 Ga2.5O12:Ce single crystal (SC) substrates. The scintillation properties of film/crystal epitaxial structures were investigated under α–particle and γ–quantum excitations. Under α–particle excitation, the light yield of mentioned SCF scintillators is significantly less than that in their substrates due to the influence of Pb2+ flux contamination and formation of Pb2+-Ce4+ centers. Meanwhile, these SCF scintillators under α–excitation possess significantly faster decay kinetics than that of their substrates under γ–excitation. Therefore, the Gd3Al5-xGaxO12:Ce SCFs (x = 1.16–2.67) /Gd3Al2.5Ga2.5O12:Ce SC epitaxial structures can be used as composite scintillators for simultaneous registration of the components of mixed ionizing fluxes.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA16-15569S" target="_blank" >GA16-15569S: Rychlé tenkovrstvé scintilátory pro 2D-zobrazování s vysokým rozlišením</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science and Engineering B-Advanced Functional Solid-State Materials

ISSN

0921-5107

e-ISSN

1873-4944

Svazek periodika

264

Číslo periodika v rámci svazku

Feb

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

9

Strana od-do

114909

Kód UT WoS článku

000605207700005

EID výsledku v databázi Scopus

2-s2.0-85096858089